Toshiba Diodes, transistors, thyristors
3 797 Toshiba Diodes, transistors, thyristors
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| N° de référence | Prix | Stock | Fabricant | Catégorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TTC015B,Q(S)
Trans GP BJT NPN 80V 2A 1500mW 3-Pin TO-126N Sack
|
Stock
39
$0.409
Par unité
|
Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 160 | 1 | 7 | 1.5@100mA@1A | 2 | 1500 | 50 to 120 | 80@1mA@2V|100@0.5A@2V|60@1A@2V | 0.3@5mA@0.5A|0.5@100mA@1A | Sack | 3 | TO-126N | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK4R3E06PL,S1X(S
Trans MOSFET N-CH Si 60V 106A 3-Pin(3+Tab) TO-220
|
Stock
15
De $1.06 à $2.17
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 87000 | 106 | 4.3@10V | 23.9@4.5V|48.2@10V | 3280@30V | 3 | TO-220 | TO | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTA1452B,S4X
Trans GP BJT PNP 80V 12A 2000mW 3-Pin(3+Tab) TO-220SIS Magazine
|
Stock
250
$1.3521
Par unité
|
Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 80 | 80 | 1 | 6 | 1.2@0.3A@6A | 12 | 2000 | 30 to 50|50 to 120|120 to 200 | 120@1A@1V|40@6A@1V | 0.4@0.3A@6A | Magazine | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW027N65C,S1F(S
Trans MOSFET N-CH SiC 650V 58A 3-Pin(3+Tab) TO-247
|
Stock
20
De $22.50 à $37.00
Par unité
|
Toshiba | MOSFET | Power MOSFET | SiC | N | Single | Enhancement | 1 | 650 | 25 | 156000 | 58 | 37@18V | 65@18V | 2288@400V | 3 | TO-247 | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N44FE,LM
Trans MOSFET N-CH Si 30V 0.1A 6-Pin ES T/R Automotive AEC-Q101
|
Stock
450
De $0.0646 à $0.3348
Par unité
|
Toshiba | MOSFET | Small Signal | Si | N | Dual | Enhancement | 2 | 30 | ±10@N Channel|±8@P Channel | 1.5 | 150 | 0.1 | 4000@4V | 1.23@4V@N Channel|1.2@4V@P Channel | 8.5@3V | Tape and Reel | 6 | ES | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TJ15S06M3L(T6L1,NQ
Trans MOSFET P-CH Si 60V 15A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101
|
Stock
1 609
De $0.788 à $1.77
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | P | Single | Enhancement | 1 | 60 | 10 | 3 | 41000 | 15 | 50@10V | 36@10V | 36 | 1770@10V | Tape and Reel | 3 | DPAK+ | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GT15J341,S4X(S
Trans IGBT Chip N-CH 600V 15A 30W 3-Pin(3+Tab) TO-220SIS Magazine
|
Stock
50
De $1.26 à $2.44
Par unité
|
Toshiba | Puce IGBT | N | Single | ±25 | 600 | 15 | 30 | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS04(TE12L,Q,M)
Diode Schottky 30V 5A 2-Pin M-FLAT T/R
|
Stock
22 070
De $0.2741 à $0.2784
Par unité
|
Toshiba | Rectifiers | Schottky Diode | Single | 30 | 5 | 70 | 0.37 | 8000 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS382(TE85L,F)
Diode Switching 85V 0.1A 4-Pin USQ T/R
|
Stock
1 036
De $0.114 à $0.314
Par unité
|
Toshiba | Rectifiers | Switching Diode | Dual Parallel | 85 | 0.1 | 2 | 1.2@0.1A | 0.5 | 100 | 4 | Tape and Reel | 4 | USQ | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TK28A65W,S5X(M
Trans MOSFET N-CH Si 650V 27.6A 3-Pin(3+Tab) TO-220SIS
|
Stock
14
De $3.11 à $3.67
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 45000 | 27.6 | 110@10V | 75@10V | 3000@300V | 3 | TO-220SIS | TO | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1401,LF
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin S-Mini T/R Automotive AEC-Q101
|
Stock
6 000
De $0.032 à $0.0363
Par unité
|
Toshiba | BJT numérique | NPN | Single | 50 | 0.1 | 4.7 | 1 | 200 | 30@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH9R00CQH,LQ(M1
Trans MOSFET N-CH Si 150V 108A 8-Pin SOP Advance T/R
|
Stock
4 770
De $1.04 à $3.09
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 150 | ±20 | 3000 | 108 | 9@10V | 36@8V|44@10V | 44 | 3500@75V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8132,LQ(S
Trans MOSFET P-CH Si 40V 7A 8-Pin SOP T/R
|
Stock
16
$1.56
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | P | Single Quad Drain Triple Source | Enhancement | 1 | 40 | 20 | 1900 | 7 | 25@10V | 34@10V | 34 | 1580@10V | Tape and Reel | 8 | SOP | SO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TK8R2E06PL,S1X(S
Trans MOSFET N-CH Si 60V 50A 3-Pin(3+Tab) TO-220
|
Stock
130
De $0.529 à $0.879
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 81000 | 50 | 8.2@10V | 15@4.5V|28@10V | 1990@30V | 3 | TO-220 | TO | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1832-GR,LF(T
Trans GP BJT PNP 50V 0.15A 100mW 3-Pin SSM T/R Automotive AEC-Q101
|
Stock
2 760
De $0.0442 à $0.112
Par unité
|
Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.15 | 100 | 200 to 300 | 200@2mA@6V | 0.3@10mA@100mA | Tape and Reel | 3 | SSM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRZ16(TE85L,Q,M)
Zener Diode Single 16V 10% 30Ohm 700mW 2-Pin S-FLAT T/R
|
Stock
2 060
De $0.0927 à $0.242
Par unité
|
Toshiba | Zener | Voltage Regulator | Single | 16 | 10% | 10 | 10 | 30 | 700 | 700 | Tape and Reel | 2 | S-FLAT | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MUZ8V2,LF
Zener Diode Single 8.2V 6% 30Ohm 600mW 3-Pin USM T/R
|
Stock
5 900
$0.0299
Par unité
|
Toshiba | Zener | Voltage Regulator | Single | 8.2 | 6% | 5 | 0.1 | 30 | 600 | 600 | 67(Typ) | Tape and Reel | 3 | USM | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TK8A10K3,S5Q(M
Trans MOSFET N-CH 100V 8A 3-Pin(3+Tab) TO-220SIS
|
Stock
17
De $0.667 à $0.891
Par unité
|
Toshiba | MOSFET | Power MOSFET | N | Single | 1 | 100 | 18000 | 8 | 120@10V | 12.9 | 530 | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K37MFV,L3F
Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R
|
Stock
19 392
De $0.0166 à $0.0199
Par unité
|
Toshiba | MOSFET | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 150 | 0.25 | 2200@4.5V | 12@10V | Tape and Reel | 3 | VESM | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK9P65W,RQ
Trans MOSFET N-CH Si 650V 9.3A 3-Pin(2+Tab) DPAK T/R
|
Stock
1 864
$0.646
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 80000 | 9.3 | 560@10V | 20@10V | 20 | 700@300V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6L12TU,LF(T
Trans MOSFET N/P-CH Si 30V/20V 0.5A 6-Pin UF T/R
|
Stock
770
De $0.234 à $0.646
Par unité
|
Toshiba | MOSFET | Small Signal | Si | N|P | Dual | Enhancement | 2 | 30@N Channel|20@P Channel | ±12 | 500 | 0.5 | 145@4.5V@N Channel|260@4V@P Channel | 245@10V@N Channel|218@10V@P Channel | Tape and Reel | 6 | UF | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J132TU,LF(T
Trans MOSFET P-CH Si 12V 5.4A 3-Pin UFM T/R
|
Stock
698
$0.1703
Par unité
|
Toshiba | MOSFET | Small Signal | Si | P | Single | Enhancement | 1 | 12 | ±6 | 500 | 5.4 | 17@4.5V | 33@4.5V | 2700@10V | Tape and Reel | 3 | UFM | No | Yes | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N813R,LF
Trans MOSFET N-CH Si 100V 3.5A 6-Pin TSOP-F T/R Automotive AEC-Q101
|
Stock
1 293
$0.1379
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | N | Dual | Enhancement | 2 | 100 | ±20 | 2500 | 3.5 | 112@10V | 3.6@4.5V | 242@15V | Tape and Reel | 6 | TSOP-F | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
2SA1162-GR,LF(T
Trans GP BJT PNP 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R
|
Stock
1 193
De $0.0376 à $0.0958
Par unité
|
Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.15 | 150 | 4 | 0.3@10mA@100mA | 10 | Tape and Reel | 3 | S-Mini | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SSM3K36MFV,L3F(T
Trans MOSFET N-CH Si 20V 0.5A 3-Pin VESM T/R
|
Stock
24
$0.0958
Par unité
|
Toshiba | MOSFET | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 150 | 0.5 | 630@5V | 1.23@4V | 46@10V | Tape and Reel | 3 | VESM | SOT | No | No | No | No | EAR99 | No |