Toshiba Diodes, Transistors and Thyristors
3 721 Toshiba Diodes, Transistors and Thyristors
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| N° de référence | Prix | Stock | Fabricant | Catégorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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Les plus consultées
1SV229TPH3F
Varactor Diode Single 15V 14pF 2-Pin USC T/R
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Stock
2 329
De $0.123 à $0.201
Par unité
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Toshiba | Varactor | VCO | UHF | Single | 15 | 0.003 | 2 | 2V/10V | 14@2V | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CUZ20V,H3F
Zener Diode Single 20V 6% 70Ohm 600mW 2-Pin USC T/R
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Stock
3 910
$0.0299
Par unité
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Toshiba | Zener | Voltage Regulator | Single | 20 | 6% | 5 | 0.1 | 70 | 600 | 600 | 29(Typ) | Tape and Reel | 2 | USC | SOD | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC5200N(S1,E,S)
Trans GP BJT NPN 230V 15A 150000mW 3-Pin(3+Tab) TO-3PN Magazine
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Stock
12
De $1.94 à $3.39
Par unité
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 230 | 230 | 1 | 5 | 15 | 150000 | 50 to 120|30 to 50 | 80@1A@5V|35@7A@5V | 0.83 | 200 | 3@0.8A@8A | Magazine | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N44FE,LM
Trans MOSFET N-CH Si 30V 0.1A 6-Pin ES T/R Automotive AEC-Q101
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Stock
4 000
De $0.0487 à $0.3348
Par unité
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Toshiba | MOSFET | Small Signal | Si | N | Dual | Enhancement | 2 | 30 | ±10@N Channel|±8@P Channel | 1.5 | 150 | 0.1 | 4000@4V | 1.23@4V@N Channel|1.2@4V@P Channel | 8.5@3V | Tape and Reel | 6 | ES | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTA1452B,S4X
Trans GP BJT PNP 80V 12A 2000mW 3-Pin(3+Tab) TO-220SIS Magazine
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Stock
250
$1.3507
Par unité
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Toshiba | GP BJT | PNP | Bipolar Power | Si | Single | 80 | 80 | 1 | 6 | 1.2@0.3A@6A | 12 | 2000 | 30 to 50|50 to 120|120 to 200 | 120@1A@1V|40@6A@1V | 0.4@0.3A@6A | Magazine | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CRS10I30E,LQ(O Schottky Barrier Diode |
Stock
2 900
De $0.0646 à $0.152
Par unité
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Toshiba | Rectifiers | 2 | S-FLAT | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK16J55D(F)
Trans MOSFET N-CH Si 550V 16A 3-Pin(3+Tab) TO-3PN
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Stock
67
De $1.16 à $1.96
Par unité
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Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 550 | ±30 | 250000 | 16 | 370@10V | 40@10V | 40 | 2300@25V | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2421(TE85L,F)
Trans Digital BJT PNP 50V 0.8A 200mW 3-Pin S-Mini T/R
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Stock
2 180
De $0.168 à $0.378
Par unité
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Toshiba | BJT numérique | PNP | Single | 50 | 0.8 | 1 | 1 | 200 | 60@100mA@1V | 0.25@2mA@50mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK9A90E,S4X(S
Trans MOSFET N-CH Si 900V 9A 3-Pin(3+Tab) TO-220SIS Tube
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Stock
20
De $1.62 à $3.34
Par unité
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Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 4 | 50000 | 9 | 1300@10V | 46@10V | 46 | 2000@25V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN2R203NC,L1Q
Trans MOSFET N-CH Si 30V 100A 8-Pin TSON EP Advance T/R
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Stock
235 000
$0.2036
Par unité
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Toshiba | MOSFET | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 1900 | 100 | 2.2@10V | 34@10V | 34 | 2230@15V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K347R,LF
Trans MOSFET N-CH Si 38V 2A Automotive AEC-Q101 3-Pin SOT-23F T/R
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Stock
2
$0.0632
Par unité
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Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 38 | ±20 | 2000 | 2 | 340@10V | 2.5@10V | 2.5 | 86@10V | Tape and Reel | 3 | SOT-23F | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK1Q90A(Q) Trans MOSFET N-CH Si 900V 1A 3-Pin(3+Tab) New PW-Mold2 Bag |
Stock
340
$1.11
Par unité
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Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 20000 | 1 | 9000@10V | 13@10V | 13 | 320@25V | Bag | 3 | New PW-Mold2 | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTC015B,Q(S)
Trans GP BJT NPN 80V 2A 1500mW 3-Pin TO-126N Sack
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Stock
39
$0.401
Par unité
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Toshiba | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 160 | 1 | 7 | 1.5@100mA@1A | 2 | 1500 | 50 to 120 | 80@1mA@2V|100@0.5A@2V|60@1A@2V | 0.3@5mA@0.5A|0.5@100mA@1A | Sack | 3 | TO-126N | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GT15J341,S4X(S
Trans IGBT Chip N-CH 600V 15A 30W 3-Pin(3+Tab) TO-220SIS Magazine
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Stock
50
De $1.15 à $1.94
Par unité
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Toshiba | Puce IGBT | N | Single | ±25 | 600 | 15 | 30 | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW015Z65C,S1F
Trans MOSFET N-CH SiC 650V 100A 4-Pin(4+Tab) TO-247 Tube
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Stock
30
$30.85
Par unité
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Toshiba | MOSFET | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 650 | 25 | 342000 | 100 | 22@18V | 128@18V | 4850@400V | Tube | 4 | TO-247 | TO | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK4R3E06PL,S1X(S
Trans MOSFET N-CH Si 60V 106A 3-Pin(3+Tab) TO-220
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Stock
15
De $1.04 à $2.13
Par unité
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Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 87000 | 106 | 4.3@10V | 23.9@4.5V|48.2@10V | 3280@30V | 3 | TO-220 | TO | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMH04(T2L,TEM,Q)
Diode Switching 200V 1A 2-Pin M-FLAT T/R
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Stock
186
De $0.0586 à $0.0685
Par unité
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Toshiba | Rectifiers | Switching Diode | Single | 200 | 1@Ta=26C | 20 | 0.98 | 10 | 35 | Tape and Reel | 2 | M-FLAT | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TPN22006NH,LQ(S
Trans MOSFET N-CH Si 60V 21A 8-Pin TSON EP Advance T/R
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Stock
980
De $0.194 à $0.538
Par unité
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Toshiba | MOSFET | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 18000 | 21 | 22@10V | 12@10V | 12 | 710@30V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK10A60W,S4VX(M
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Magazine
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Stock
35
De $0.598 à $0.699
Par unité
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Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 30000 | 9.7 | 380@10V | 20@10V | 700@300V | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SV280,H3F(T
Diode VAR Cap Single 15V 3.8pF 2-Pin ESC T/R
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Stock
2 119
De $0.0991 à $0.259
Par unité
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Toshiba | Varactor | VCO | UHF | Single | 15 | 0.003 | 2 | 2V/10V | 3.8@2V | Tape and Reel | 2 | ESC | SOD | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS190(TE85L,F)
Diode Switching 85V 0.1A 3-Pin S-Mini T/R Automotive AEC-Q101
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Stock
1 033
De $0.0675 à $0.14
Par unité
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Toshiba | Rectifiers | Switching Diode | Single | 85 | 0.1 | 2 | 1.2@0.1A | 0.5 | 150 | 4 | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK290P60Y,RQ
Trans MOSFET N-CH Si 600V 11.5A 3-Pin(2+Tab) DPAK T/R
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Stock
3
$0.4598
Par unité
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Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4 | 100000 | 11.5 | 290@10V | 25@10V | 25 | 730@300V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK7R0E08QM,S1X
Trans MOSFET N-CH Si 80V 64A 3-Pin(3+Tab) TO-220 Tube
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Stock
150
$0.4368
Par unité
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Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 80 | ±20 | 3.5 | 87000 | 64 | 7@10V | 24@6V|39@10V | 39 | 2700@40V | U-MOS X-H | Tube | 3 | TO-220 | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK16G60W,RVQ(S
Trans MOSFET N-CH Si 600V 15.8A 3-Pin(2+Tab) D2PAK
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Stock
1 000
De $0.978 à $2.88
Par unité
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Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 130000 | 15.8 | 190@10V | 38@10V | 38 | 1350@300V | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
XPN6R706NC,L1XHQ
Trans MOSFET N-CH Si 60V 40A 8-Pin TSOP Advance(WF) EP T/R Automotive AEC-Q101
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Stock
9 838
De $0.3514 à $0.3992
Par unité
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Toshiba | MOSFET | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 2.5 | 2270 | 40 | 6.7@10V | 35@10V | 35 | 2000@10V | Tape and Reel | 8 | TSOP Advance(WF) EP | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 |