Toshiba Diodes, Transistors and Thyristors
3 797 Toshiba Diodes, Transistors and Thyristors
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| N° de référence | Prix | Stock | Fabricant | Catégorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Surge Current Rating - (A) | Material | Configuration | Channel Type | Maximum Reverse Voltage - (V) | Maximum Rate of Rise of On-State Current - (A/us) | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Repetitive Peak Forward Blocking Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Minimum DC Current Gain | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Ambient Thermal Resistance | Frequency Band | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TK380A60Y,S4X
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Tube
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Stock
4
$0.4598
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | Single | N | Enhancement | 1 | 600 | ±30 | 4 | 9.7 | 20@10V | 20 | 590@300V | 30000 | 380@10V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK7P60W5,RVQ(S
Trans MOSFET N-CH Si 600V 7A 3-Pin(2+Tab) DPAK T/R
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Stock
1 504
De $0.549 à $1.62
Par unité
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Toshiba | MOSFET | Power MOSFET | Si | Single | N | Enhancement | 1 | 600 | ±30 | 4.5 | 7 | 16@10V | 16 | 490@300V | 60000 | 670@10V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1104MFV,L3F
Trans Digital BJT NPN 50V 0.1A 150mW 3-Pin VESM T/R Automotive AEC-Q101
|
Stock
711
$0.0138
Par unité
|
Toshiba | BJT numérique | NPN | Single | 50 | 0.1 | 47 | 1 | 80@10mA@5V | 0.3@0.5mA@5mA | 150 | Tape and Reel | 3 | VESM | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK208-Y(TE85L,F)
Trans JFET N-CH Si 3-Pin S-Mini T/R
|
Stock
1 623
De $0.237 à $0.378
Par unité
|
Toshiba | JFET | Si | Single | N | 1 | -50 | 8.2 | 100 | 0.5(Typ) | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMS14(TE12L,Q,M)
Diode Schottky 60V 2A 2-Pin M-FLAT T/R
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Stock
39 710
$0.1747
Par unité
|
Toshiba | Rectifiers | Schottky Diode | Single | 60 | 2 | 40 | 0.58 | 200 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK16J55D(F)
Trans MOSFET N-CH Si 550V 16A 3-Pin(3+Tab) TO-3PN
|
Stock
67
De $1.19 à $2.00
Par unité
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Toshiba | MOSFET | Power MOSFET | Si | Single | N | Enhancement | 1 | 550 | ±30 | 16 | 40@10V | 40 | 2300@25V | 250000 | 370@10V | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW048N65C,S1F
Trans MOSFET N-CH SiC 650V 40A 3-Pin(3+Tab) TO-247
|
Stock
30
De $9.4287 à $7.787
Par unité
|
Toshiba | MOSFET | Power MOSFET | SiC | Single | N | Enhancement | 1 | 650 | 25 | 40 | 41@18V | 1362@400V | 132000 | 65@18V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
RN1425TE85LF
Trans Digital BJT NPN 50V 0.8A 200mW 3-Pin S-Mini T/R
|
Stock
4 840
De $0.16 à $0.444
Par unité
|
Toshiba | BJT numérique | NPN | Single | 50 | 0.8 | 0.47 | 0.047 | 90@100mA@1V | 0.25@1mA@50mA|0.25@2mA@50mA | 200 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK10A60W,S4VX
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Magazine
|
Stock
20
$1.149
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | Single | N | Enhancement | 1 | 600 | ±30 | 9.7 | 20@10V | 20 | 700@300V | 30000 | 380@10V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SSM3K37MFV,L3F(T
Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R
|
Stock
7 718
De $0.0406 à $0.128
Par unité
|
Toshiba | MOSFET | Small Signal | Si | Single | N | Enhancement | 1 | 20 | ±10 | 1 | 0.25 | 12@10V | 150 | 2200@4.5V | 3 | VESM | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
RN2421(TE85L,F)
Trans Digital BJT PNP 50V 0.8A 200mW 3-Pin S-Mini T/R
|
Stock
5 185
De $0.182 à $0.417
Par unité
|
Toshiba | BJT numérique | PNP | Single | 50 | 0.8 | 1 | 1 | 60@100mA@1V | 0.25@2mA@50mA | 200 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK16G60W,RVQ(S
Trans MOSFET N-CH Si 600V 15.8A 3-Pin(2+Tab) D2PAK
|
Stock
1 000
De $0.993 à $2.94
Par unité
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Toshiba | MOSFET | Power MOSFET | Si | Single | N | Enhancement | 1 | 600 | ±30 | 15.8 | 38@10V | 38 | 1350@300V | 130000 | 190@10V | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK7P60W5,RVQ
Trans MOSFET N-CH Si 600V 7A 3-Pin(2+Tab) DPAK T/R
|
Stock
1 900
$0.5919
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | Single | N | Enhancement | 1 | 600 | ±30 | 4.5 | 7 | 16@10V | 16 | 490@300V | 60000 | 670@10V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SJ305TE85LF
Trans MOSFET P-CH Si 30V 0.2A 3-Pin S-Mini T/R
|
Stock
4 940
De $0.215 à $0.596
Par unité
|
Toshiba | MOSFET | Small Signal | Si | Single | P | Enhancement | 1 | 30 | ±20 | 0.2 | 92@3V | 200 | 4000@2.5V | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SS190(TE85L,F)
Diode Switching 85V 0.1A 3-Pin S-Mini T/R Automotive AEC-Q101
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Stock
778
De $0.0435 à $0.102
Par unité
|
Toshiba | Rectifiers | Switching Diode | Single | 85 | 0.1 | 2 | 1.2@0.1A | 0.5 | 4 | 150 | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCC8104,L1Q(CM
Trans MOSFET P-CH Si 30V 20A 8-Pin TSON EP Advance T/R
|
Stock
1 848
De $0.221 à $0.423
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | Single Quad Drain Triple Source | P | Enhancement | 1 | 30 | 20 | 20 | 58@10V | 2260@10V | 1900 | 8.8@10V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS8E65H,S1Q
Diode Schottky SiC 650V 23A 2-Pin(2+Tab) TO-220 Stick
|
Stock
87
$1.461
Par unité
|
Toshiba | Rectifiers | Schottky Diode | SiC | Single | 650 | 23 | 410 | 1.35@8A | 90 | 75000 | Stick | 2 | TO-220 | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1902,LF(CT
Trans Digital BJT NPN 50V 0.1A 200mW 6-Pin US T/R Automotive AEC-Q101
|
Stock
9 000
De $0.048 à $0.0638
Par unité
|
Toshiba | BJT numérique | NPN | Dual | 50 | 0.1 | 10 | 1 | 50@10mA@5V | 0.3@0.25mA@5mA | 200 | Tape and Reel | 6 | US | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS427,L3M(T
Diode Switching Si 85V 0.2A 2-Pin SOD-923 T/R
|
Stock
1 754
De $0.0373 à $0.102
Par unité
|
Toshiba | Rectifiers | Switching Diode | Si | Single | 85 | 0.2 | 1 | 1.2@0.1A | 0.5@80V | 0.3(Typ) | 1600(Typ) | 150 | Tape and Reel | 2 | SOD-923 | SOD | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK290P60Y,RQ
Trans MOSFET N-CH Si 600V 11.5A 3-Pin(2+Tab) DPAK T/R
|
Stock
3
$0.4598
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | Single | N | Enhancement | 1 | 600 | ±30 | 4 | 11.5 | 25@10V | 25 | 730@300V | 100000 | 290@10V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K16FU,LF
Trans MOSFET N-CH Si 20V 0.1A 3-Pin USM T/R Automotive AEC-Q101
|
Stock
87
De $0.0407 à $0.1296
Par unité
|
Toshiba | MOSFET | Small Signal | Si | Single | N | Enhancement | 1 | 20 | ±10 | 0.1 | 9.3@3V | 150 | 3000@4V | Tape and Reel | 3 | USM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HN2S01FU(TE85L,F)
Diode Small Signal Schottky 15V 0.2A 6-Pin US T/R
|
Stock
1 479
De $0.112 à $0.124
Par unité
|
Toshiba | Rectifiers | Small Signal Schottky Diode | Triple Parallel | 15 | 0.2 | 1 | 0.5@0.1A | 20 | 200 | Tape and Reel | 6 | US | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2145-BL(TE85L,F)
Trans JFET N-CH 14mA Si 5-Pin SMV T/R
|
Stock
886
De $0.327 à $0.928
Par unité
|
Toshiba | JFET | Si | Dual Common Source | N | -50 | 14 | 13 | 300 | 5(Typ) | Tape and Reel | 5 | SMV | SOT | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TW027N65C,S1F(S
Trans MOSFET N-CH SiC 650V 58A 3-Pin(3+Tab) TO-247
|
Stock
20
De $22.50 à $37.00
Par unité
|
Toshiba | MOSFET | Power MOSFET | SiC | Single | N | Enhancement | 1 | 650 | 25 | 58 | 65@18V | 2288@400V | 156000 | 37@18V | 3 | TO-247 | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1313-Y,LF
Trans GP BJT PNP 50V 0.5A 200mW 3-Pin S-Mini T/R Automotive AEC-Q101
|
Stock
5
$0.0405
Par unité
|
Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.5 | 40@400mA@6V|120@100mA@1V | 30 to 50|50 to 120|120 to 200 | 0.25@10mA@100mA | 200 | Tape and Reel | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No |