Toshiba Diodes, Transistors and Thyristors
3 797 Toshiba Diodes, Transistors and Thyristors
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| N° de référence | Prix | Stock | Fabricant | Catégorie | Type | Material | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Frequency Band | Channel Type | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Number of Elements per Chip | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Peak On-State Voltage - (V) | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Continuous DC Collector Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Typical Input Resistance - (kOhm) | Test Current - (mA) | Rated Average On-State Current - (A) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Holding Current - (mA) | Maximum Drain-Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum Forward Voltage - (V) | Maximum DC Collector Current - (A) | Peak Reverse Current - (uA) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Diode Capacitance - (pF) | Repetitive Peak Forward Blocking Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Transition Frequency - (MHz) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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CSLZ6V8,L3F | 6.8V ZNR DIODE SOD-962 OVP
Diode Zener Single 6.8V 6% 400mW 2-Pin SL T/R
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Stock
7 340
De $0.0086 à $0.0817
Par unité
|
Toshiba | Zener | Voltage Regulator | Single | 6.8 | 6% | 5 | 400 | 0.5 | 30 | 400 | Tape and Reel | 2 | SL | SOD | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK7P60W5,RVQ(S
Trans MOSFET N-CH Si 600V 7A 3-Pin(2+Tab) DPAK T/R
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Stock
1 504
De $0.549 à $1.62
Par unité
|
Toshiba | MOSFET | Si | Power MOSFET | N | Single | Enhancement | 1 | 60000 | 600 | 7 | ±30 | 4.5 | 670@10V | 16@10V | 16 | 490@300V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK208-Y(TE85L,F)
Trans JFET N-CH Si 3-Pin S-Mini T/R
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Stock
1 623
De $0.237 à $0.378
Par unité
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Toshiba | JFET | Si | N | Single | 1 | -50 | 100 | 8.2 | 0.5(Typ) | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK58E06N1,S1X(S
Trans MOSFET N-CH Si 60V 105A 3-Pin(3+Tab) TO-220 Magazine
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Stock
49
De $0.777 à $1.03
Par unité
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Toshiba | MOSFET | Si | Power MOSFET | N | Single | Enhancement | 1 | 110000 | 60 | 105 | ±20 | 4 | 5.4@10V | 46@10V | 46 | 3400@30V | Magazine | 3 | TO-220 | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MUZ8V2,LF
Zener Diode Single 8.2V 6% 30Ohm 600mW 3-Pin USM T/R
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Stock
5 900
$0.0299
Par unité
|
Toshiba | Zener | Voltage Regulator | Single | 8.2 | 6% | 5 | 600 | 0.1 | 67(Typ) | 30 | 600 | Tape and Reel | 3 | USM | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH5900CNH,L1Q(M
Trans MOSFET N-CH Si 150V 18A 8-Pin SOP Advance T/R
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Stock
7 579
De $0.414 à $0.696
Par unité
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Toshiba | MOSFET | Si | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 42000 | 150 | 18 | ±20 | 4 | 59@10V | 7@10V | 7 | 460@75V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMH01(T2L,TEMQ)
Diode Switching 200V 3A 2-Pin M-FLAT T/R
|
Stock
24
$0.293
Par unité
|
Toshiba | Rectifiers | Switching Diode | Single | 200 | 3 | 40 | 0.98 | 10 | 35 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK14G65W,RQ(S
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(2+Tab) D2PAK T/R
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Stock
875
De $1.23 à $2.87
Par unité
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Toshiba | MOSFET | Si | Power MOSFET | N | Single | Enhancement | 1 | 130000 | 650 | 13.7 | ±30 | 250@10V | 35@10V | 35 | 1300@300V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCP8505(TE85L,F)
Trans GP BJT NPN 50V 3A 3000mW 8-Pin PS T/R
|
Stock
1 765
De $0.0976 à $0.108
Par unité
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Toshiba | GP BJT | NPN | Si | Bipolar Power | Single Hex Collector | 1 | 50 | 1.1@20mA@1A | 100 | 3000 | 7 | 3 | 200 to 300|300 to 500 | 200@1A@2V|400@0.3A@2V | 0.14@20mA@1A | Tape and Reel | 8 | PS | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK12A60W,S5VX(J
Trans MOSFET N-CH Si 600V 11.5A 3-Pin(3+Tab) TO-220SIS Tube
|
Stock
21
De $0.927 à $1.38
Par unité
|
Toshiba | MOSFET | Si | Power MOSFET | N | Single | Enhancement | 1 | 35000 | 600 | 11.5 | ±30 | 3.7 | 300@10V | 25@10V | 25 | 890@300V | DTMOSIV | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K44MFV,L3XGF(T
Trans MOSFET N-CH Si 30V 0.1A 3-Pin VESM T/R Automotive AEC-Q101
|
Stock
8 000
De $0.0687 à $0.162
Par unité
|
Toshiba | MOSFET | Si | Small Signal | N | Single | Enhancement | 1 | 150 | 30 | 0.1 | ±20 | 4000@4V | 8.5@3V | Tape and Reel | 3 | VESM | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6K514NU,LF(T
Trans MOSFET N-CH Si 40V 12A Automotive AEC-Q101 6-Pin UDFN-B EP T/R
|
Stock
2 990
De $0.138 à $0.181
Par unité
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Toshiba | MOSFET | Si | Power MOSFET | N | Single Quad Drain | Enhancement | 1 | 2500 | 40 | 12 | ±20 | 11.6@10V | 7.5@4.5V | 1110@20V | Tape and Reel | 6 | UDFN-B EP | DFN | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3K36MFV,L3F(T
Trans MOSFET N-CH Si 20V 0.5A 3-Pin VESM T/R
|
Stock
24
$0.0958
Par unité
|
Toshiba | MOSFET | Si | Small Signal | N | Single | Enhancement | 1 | 150 | 20 | 0.5 | ±10 | 630@5V | 1.23@4V | 46@10V | Tape and Reel | 3 | VESM | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN4R203NC,L1Q(M
Trans MOSFET N-CH Si 30V 53A 8-Pin TSON EP Advance T/R
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Stock
5 000
De $0.235 à $0.652
Par unité
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Toshiba | MOSFET | Si | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 22000 | 30 | 53 | ±20 | 4.2@10V | 24@10V | 24 | 1370@15V | U-MOS VIII | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SSM3K35AMFV,L3F
Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R
|
Stock
6 836
De $0.0232 à $0.1791
Par unité
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Toshiba | MOSFET | Si | Small Signal | N | Single | Enhancement | 1 | 500 | 20 | 0.25 | ±10 | 1100@4.5V | 0.62@4.5V | 18@10V | Tape and Reel | 3 | VESM | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN4C06J-GR(TE85L,F
Trans GP BJT NPN 120V 0.1A 300mW 5-Pin SMV T/R
|
Stock
5
$0.507
Par unité
|
Toshiba | GP BJT | NPN | Si | Bipolar Small Signal | Dual Common Emitter | 2 | 120 | 120 | 300 | 5 | 0.1 | 200 to 300 | 200@2mA@6V | 0.3@1mA@10mA | Tape and Reel | 5 | SMV | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2705JE(TE85L,F)
Trans Digital BJT PNP 50V 0.1A 200mW 5-Pin ESV T/R
|
Stock
3 215
De $0.0891 à $0.233
Par unité
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Toshiba | BJT numérique | PNP | Dual Common Emitter | 50 | 0.1 | 2.2 | 200 | 0.0468 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 5 | ESV | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J375F,LXHF
Trans MOSFET P-CH Si 20V 2A 3-Pin S-Mini Automotive AEC-Q101
|
Stock
75
$0.0655
Par unité
|
Toshiba | MOSFET | Si | Small Signal | P | Single | Enhancement | 1 | 1200 | 20 | 2 | 6 | 150@4.5V | 4.6@4.5V | 270@10V | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC2712-BL,LXGF(T Trans GP BJT NPN 50V 0.15A 150mW 3-Pin S-Mini T/R Automotive AEC-Q101 |
Stock
2 440
$0.598
Par unité
|
Toshiba | GP BJT | NPN | Si | Bipolar Small Signal | Single | 1 | 50 | 60 | 150 | 5 | 0.15 | 300 to 500 | 350@2mA@6V | 0.25@10mA@100mA | 3 | S-Mini | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3J331R,LF(T
Trans MOSFET P-CH Si 20V 4A 3-Pin SOT-23F T/R
|
Stock
27 000
$0.0678
Par unité
|
Toshiba | MOSFET | Si | Power MOSFET | P | Single | Enhancement | 1 | 2000 | 20 | 4 | ±8 | 1 | 55@4.5V | 10.4@4.5V | 630@10V | Tape and Reel | 3 | SOT-23F | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK35A08N1,S4X(S
Trans MOSFET N-CH Si 80V 55A 3-Pin(3+Tab) TO-220SIS Magazine
|
Stock
10
De $0.571 à $0.763
Par unité
|
Toshiba | MOSFET | Si | Power MOSFET | N | Single | Enhancement | 1 | 30000 | 80 | 55 | ±20 | 4 | 12.2@10V | 25@10V | 25 | 1700@40V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPW1500CNH,L1Q(M Trans MOSFET N-CH Si 150V 50A 8-Pin DSOP Advance T/R |
Stock
5 000
De $1.35 à $3.15
Par unité
|
Toshiba | MOSFET | Si | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 2500 | 150 | 50 | ±20 | 4 | 15.4@10V | 22@10V | 22 | 1700@75V | Tape and Reel | 8 | DSOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CMS16(TE12L,Q,M)
Diode Schottky 40V 3A 2-Pin M-FLAT T/R
|
Stock
2 522
De $0.70 à $0.897
Par unité
|
Toshiba | Rectifiers | Schottky Diode | Single | 40 | 3 | 30 | 0.55 | 200 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK5A90E,S4X(S
Trans MOSFET N-CH Si 900V 4.5A 3-Pin(3+Tab) TO-220SIS
|
Stock
39
De $0.743 à $1.01
Par unité
|
Toshiba | MOSFET | Si | Power MOSFET | N | Single | Enhancement | 1 | 40000 | 900 | 4.5 | ±30 | 3100@10V | 20@10V | 950@25V | 3 | TO-220SIS | TO | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPWR8004PL,L1Q(M
Trans MOSFET N-CH Si 40V 340A 8-Pin DSOP Advance T/R
|
Stock
4 808
De $2.86 à $2.95
Par unité
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Toshiba | MOSFET | Si | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 3000 | 40 | 340 | ±20 | 2.4 | 0.8@10V | 49@4.5V|103@10V | 103 | 7370@20V | Tape and Reel | 8 | DSOP Advance | SO | No | No | No | No | No | EAR99 | No |