Teledyne e2v Transistors FET
2 Teledyne e2v Semiconductors Transistors FET
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| N° de référence | Prix | Stock | Fabricant | Catégorie | Category | Material | Configuration | Channel Mode | Channel Type | Number of Elements per Chip | Maximum Drain-Source Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum Continuous Drain Current - (A) | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Typical Input Capacitance @ Vds - (pF) | Pin Count | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TDG100E90BEPF
Trans MOSFET N-CH GaN 100V 90A 4-Pin T/R
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Teledyne e2v | MOSFET | Power MOSFET | GaN | Single Dual Source | Enhancement | N | 1 | 100 | 7 | 90 | 9.5@6V | 8@6V | 600@50V | 4 | No | No | No | No | EAR99 | No | |
| TDG650E601TSP Space GaN E-Mode Transistor |
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Teledyne e2v | MOSFET | 4 | No | No | No | No | No |