onsemi Diodes, Transistors and Thyristors
11 709 onsemi Diodes, Transistors and Thyristors
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| N° de référence | Prix | Stock | Fabricant | Catégorie | Type | Technology | Maximum Rate of Rise of Off-State Voltage - (V/us) | Maximum Breakover Voltage - (V) | Category | Bridge Type | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Peak Operating Voltage - (V) | Maximum Breakover Current - (mA) | Material | Frequency Band | Diode Type | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Peak RMS Reverse Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Regulator Current - (mA) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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NTBG014N120M3P
Trans MOSFET N-CH SiC 1.2KV 150A 8-Pin(7+Tab) D2PAK T/R
|
Stock
65
$27.50
Par unité
|
onsemi | MOSFET | Power MOSFET | SiC | N | Single Hex Source | Enhancement | 1 | 1200 | 22 | 652000 | 150 | 20@18V | 337@18V | 329 | 6313@800V | Tape and Reel | 8 | D2PAK | TO | No | No | Yes | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTBG030N120M3S
Trans MOSFET N-CH SiC 1.2KV 77A 8-Pin(7+Tab) D2PAK T/R
|
Stock
1 630
De $6.4624 à $2.522
Par unité
|
onsemi | MOSFET | Power MOSFET | SiC | N | Single Hex Source | Enhancement | 1 | 1200 | 22 | 348000 | 77 | 39@18V | 107@18V | 2430@800V | 8 | D2PAK | TO | No | No | Yes | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTH4L030N120M3S
Trans MOSFET N-CH SiC 1.2KV 73A 4-Pin(4+Tab) TO-247 Tube
|
Stock
13 627
De $6.246 à $6.719
Par unité
|
onsemi | MOSFET | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 1200 | 22 | 313000 | 73 | 39@18V | 107@18V | 2430@800V | 4 | TO-247 | TO | No | No | Yes | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
NTBG060N065SC1
Trans MOSFET N-CH SiC 650V 46A 8-Pin(7+Tab) D2PAK T/R
|
Stock
2 265
De $6.0276 à $2.895
Par unité
|
onsemi | MOSFET | Power MOSFET | SiC | N | Single Hex Source | Enhancement | 1 | 650 | 22 | 170000 | 46 | 70@18V | 74@18V | 1473@325V | Tape and Reel | 8 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NRVUS1FFA
Diode Switching 300V 1A 2-Pin SOD-123FL T/R Automotive AEC-Q101
|
Stock
4 963
De $0.0919 à $0.5011
Par unité
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onsemi | Rectifiers | Switching Diode | Single | 300 | 1 | 30 | 0.95 | 5 | 50 | Tape and Reel | 2 | SOD-123FL | SOD | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVTFS020N06CTAG
Trans MOSFET N-CH 60V 7A 8-Pin WDFN EP T/R Automotive AEC-Q101
|
Stock
3 000
De $0.435 à $0.4557
Par unité
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onsemi | MOSFET | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 4 | 2500 | 7 | 20.3@10V | 5.8@10V | 5.8 | 355@30V | Tape and Reel | 8 | WDFN EP | DFN | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVHL060N090SC1
Trans MOSFET N-CH SiC 900V 46A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
|
Stock
75 150
$10.211
Par unité
|
onsemi | MOSFET | Power MOSFET | SiC | N | Single | Enhancement | 1 | 900 | 22 | 4.3 | 221000 | 46 | 84@15V | 87@15V | 1770@450V | Tube | 3 | TO-247 | TO | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVMYS6D2N06CLTWG
Trans MOSFET N-CH 60V 17A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
|
Stock
3 000
$0.6407
Par unité
|
onsemi | MOSFET | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 60 | 20 | 3600 | 17 | 6.1@10V | 20@10V|9@4.5V | 1400@25V | Tape and Reel | 5 | LFPAK | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTMTSC002N10MCTXG
Trans MOSFET N-CH 100V 45A 8-Pin TDFNW EP T/R
|
Stock
3 000
$2.7548
Par unité
|
onsemi | MOSFET | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 9000 | 45 | 2@10V | 89@10V | 6305@50V | Tape and Reel | 8 | TDFNW EP | DFN | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTZD3154NT2G
Trans MOSFET N-CH 20V 0.54A 6-Pin SOT-563 T/R
|
Stock
12 000
De $0.0568 à $0.3516
Par unité
|
onsemi | MOSFET | Small Signal | N | Dual | Enhancement | 2 | 20 | ±7 | 500 | 1 | 280 | 0.54 | 550@4.5V | 1.5@4.5V | 13 | 80@16V | 400@4.5V|500@2.5V|700@1.8V | Tape and Reel | 6 | SOT-563 | SOT | No | Yes | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTTFS015N04CTAG
Trans MOSFET N-CH 40V 9.4A 8-Pin WDFN EP T/R
|
Stock
3 000
$0.1025
Par unité
|
onsemi | MOSFET | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±20 | 2900 | 9.4 | 17.3@10V | 6.3@10V | 6.3 | 325@25V | Tape and Reel | 8 | WDFN EP | DFN | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FFSM0665B
Diode Schottky SiC 650V 9.1A 4-Pin PQFN EP T/R
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Stock
30
De $1.362 à $0.8096
Par unité
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onsemi | Rectifiers | Schottky Diode | SiC | Single Dual Anode | 650 | 9.1 | 28 | 1.7 | 40 | 75000 | 259(Typ) | Tape and Reel | 4 | PQFN EP | QFN | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMSZ5272BT1G
Diode Zener Single 110V 5% 500mW 2-Pin SOD-123 T/R
|
Stock
27 000
De $0.0235 à $0.0277
Par unité
|
onsemi | Zener | Voltage Regulator | Single | 110 | 5% | 1.1 | 0.9 | 0.1 | 750 | 500 | Tape and Reel | 2 | SOD-123 | SOD | No | Yes | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FCH029N65S3-F155
Trans MOSFET N-CH 650V 75A 3-Pin(3+Tab) TO-247 Tube
|
Stock
214
$3.594
Par unité
|
onsemi | MOSFET | Power MOSFET | N | Single | Enhancement | 1 | 650 | ±30 | 463000 | 75 | 29@10V | 201@10V | 6340@400V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTMFSC4D2N10MC
Trans MOSFET N-CH 100V 29.6A 8-Pin DFN EP T/R
|
Stock
1 682
De $1.832 à $2.019
Par unité
|
onsemi | MOSFET | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 7900 | 29.6 | 4.3@10V | 27@6V|42@10V | 2856@50V | Tape and Reel | 8 | DFN EP | DFN | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTDS015N15MCT4G
Trans MOSFET N-CH 150V 11A 3-Pin(2+Tab) DPAK T/R
|
Stock
1 392
De $0.9644 à $0.4777
Par unité
|
onsemi | MOSFET | Power MOSFET | N | Single | Enhancement | 1 | 150 | ±20 | 4.5 | 3800 | 11 | 15@10V | 27@10V | 27 | 2120@75V | 0.18um to 2um | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTTFS6H860NLTAG
Trans MOSFET N-CH 80V 8.1A 8-Pin WDFN EP T/R
|
Stock
3 000
De $0.3271 à $0.3448
Par unité
|
onsemi | MOSFET | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 80 | ±20 | 2 | 3100 | 8.1 | 20@10V | 12@10V | 12 | 610@40V | Tape and Reel | 8 | WDFN EP | DFN | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTBS9D0N10MC
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK T/R
|
Stock
809
$0.4467
Par unité
|
onsemi | MOSFET | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 3800 | 14 | 9@10V | 23@10V | 23 | 1695@50V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVHL050N65S3HF
Trans MOSFET N-CH 650V 58A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
|
Stock
288
$5.213
Par unité
|
onsemi | MOSFET | Power MOSFET | N | Single | Enhancement | 1 | 650 | ±30 | 5 | 403000 | 58 | 50@10V | 119@10V | 119 | 4880@400V | Tube | 3 | TO-247 | TO | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FCB125N65S3
Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK T/R
|
Stock
800
$2.3887
Par unité
|
onsemi | MOSFET | Power MOSFET | N | Single | Enhancement | 1 | 650 | ±30 | 4.5 | 181000 | 24 | 125@10V | 46@10V | 46 | 1940@400V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NXH450B100H4Q2F2PG
Trans IGBT Module N-CH 1000V 101A 234W Tray
|
Stock
12
$25.48
Par unité
|
onsemi | Module IGBT | N | Dual | ±20 | 1000 | 101 | 234 | Tray | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTPF360N80S3Z
Trans MOSFET N-CH 800V 13A 3-Pin(3+Tab) TO-220FP Tube
|
Stock
468
$0.8249
Par unité
|
onsemi | MOSFET | Power MOSFET | N | Single | Enhancement | 1 | 800 | ±20 | 3.8 | 31000 | 13 | 360@10V | 25.3@10V | 25.3 | 1143@400V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NXH300B100H4Q2F2SG
Trans IGBT Module N-CH 1000V 73A 194W Tray
|
Stock
36
$23.82
Par unité
|
onsemi | Module IGBT | Field Stop|Trench | N | Hex | ±20 | 1000 | 73 | 194 | Tray | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NXH400N100H4Q2F2PG
Trans IGBT Module N-CH 1000V 409A/360A/360A/409A 959W 42-Pin PIM Tray
|
Stock
36
$193.40
Par unité
|
onsemi | Module IGBT | Field Stop|Trench | N | Quad | ±20 | 1000 | 409@Q1|360@Q2|360@Q3|409@Q4 | 959@Q1|805@Q2|805@Q3|959@Q4 | Tray | 42 | PIM | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FGHL50T65MQDTL4
Trans IGBT Chip N-CH 650V 80A 268W 4-Pin(4+Tab) TO-247 Tube
|
Stock
305
De $2.8629 à $0.6976
Par unité
|
onsemi | Puce IGBT | Field Stop|Trench | N | Single Dual Emitter | ±20 | 650 | 80 | 268 | Tube | 4 | TO-247 | TO | No | No | No | No | EAR99 | No | No |