NXP Semiconductors Diodes, Transistors and Thyristors
1 135 NXP Semiconductors Diodes, Transistors and Thyristors
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| N° de référence | Prix | Stock | Fabricant | Catégorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Surge Current Rating - (A) | Material | Configuration | Channel Type | Maximum Reverse Voltage - (V) | Maximum Rate of Rise of On-State Current - (A/us) | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Regulator Current - (mA) | Maximum Gate Trigger Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Repetitive Peak Forward Blocking Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Minimum DC Current Gain | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Ambient Thermal Resistance | Frequency Band | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Minimum Frequency - (MHz) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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MRF300AN
Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-247 Tube
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Stock
240
$59.9033
Par unité
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NXP Semiconductors | RF MOSFET | MOSFET | Single | N | Enhancement | 1 | CW | 133 | 10 | 403@50V | 330(Typ) | 272000 | 1.8 | 250 | 28.2 | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6VP5600HR6
Trans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R
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Stock
75
De $253.28 à $323.48
Par unité
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NXP Semiconductors | RF MOSFET | Dual Common Source | N | Enhancement | 2 | CW | 130 | 10 | 342@50V | 600(Typ) | 1667000 | 1.8 | 600 | 25 | Tape and Reel | 5 | Case 375D-05 | No | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Les plus consultées
BB173X
Varactor Diode Single 35V 34.65pF 2-Pin SOD-523 T/R
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De $0.1402 à $0.1693
Par unité
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NXP Semiconductors | Varactor | VCO | Single | 35 | 0.01 | 0.02 | 13.5 | 1V/28V | 34.65@1V | VHF | Tape and Reel | 2 | SOD-523 | SOD | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Les plus consultées
BB201,215
Diode VAR Cap Dual Common Cathode 15V 89pF 3-Pin TO-236AB T/R
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NXP Semiconductors | Varactor | Tuner|VCO | Dual Common Cathode | 15 | 0.01 | 0.02 | 3.1 | 1V/7.5V | 89@1V | Tape and Reel | 3 | TO-236AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Les plus consultées
BFU550XAR
Trans RF BJT NPN 16V 0.08A 450mW Automotive 4-Pin SOT-143B T/R
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$0.1821
Par unité
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NXP Semiconductors | BJT FR | NPN | Si | Single Dual Emitter | 16 | 30 | 1 | 3 | 0.08 | 8V/25mA | 60@15mA@8V | 50 to 120 | 1.11 | 11000(Typ) | 0.72 | 450 | 13.5(Typ) | 26.5 | 23 | 1.3(Min) | Tape and Reel | 4 | SOT-143B | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A3T18H360W23SR6 Trans RF MOSFET N-CH 65V 6-Pin T/R |
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NXP Semiconductors | RF MOSFET | Dual Common Source | N | Enhancement | 2 | 1-Carrier W-CDMA | 65 | 10 | 63 | 104000 | 1805 | 1880 | 16.6 | 6 | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF7S19170HSR3
Trans RF MOSFET N-CH 65V 3-Pin NI-880S T/R
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NXP Semiconductors | RF MOSFET | Single | N | Enhancement | 1 | 1-Carrier W-CDMA | 65 | 10 | 170 | 1930 | 1990 | 17.2 | Tape and Reel | 3 | NI-880S | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A3T21H450W23SR6 Trans RF MOSFET N-CH 65V 6-Pin T/R |
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NXP Semiconductors | RF MOSFET | MOSFET | N | Enhancement | 1-Carrier W-CDMA | 65 | 10 | 87(Typ) | 2110 | 2200 | 15.4 | 6 | No | No | No | No | 5A991g. | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZX79-C16,113
Diode Zener Single 16V 5% 500mW 2-Pin ALF T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 16 | 5% | 5 | 0.9 | 0.05 | 40 | 75 | 500 | Tape and Reel | 2 | ALF | DO | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6S19100NR1
Trans RF FET N-CH 68V 5-Pin TO-270 W T/R
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NXP Semiconductors | RF MOSFET | Single Dual Drain Dual Gate | N | Enhancement | 1 | 2-Carrier N-CDMA | 68 | ±12 | 100 | 287000 | 1930 | 1990 | 14.5 | Tape and Reel | 5 | TO-270 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BT258-500R,127
Thyristor SCR 500V 82A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 1.5 | 0.2 | 500 | 6 | 500 | 5 | 1.6@16A | 5 | 0.5 | Tube | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BTA204-600E,127
TRIAC 600V 27A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | TRIACs | 50(Min) | 100 | 1 | 25 | 600 | 12 | 600 | 1.7@5A | 0.5 | Rail | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFG24S100HR5 Wide Band RF Power Gan Transistor, 1-2690 MHz, 125 W CW, 50 V |
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NXP Semiconductors | RF MOSFET | 3 | NI-360H-2SB | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZV55-B7V5,115
Diode Zener Single 7.5V 2% 500mW 2-Pin Mini-MELF T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 7.5 | 2% | 5 | 0.9 | 1 | 15 | 150 | 500 | Tape and Reel | 2 | Mini-MELF | MELF | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFT23H160-25SR3 High Reliability RF FET IC |
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NXP Semiconductors | RF MOSFET | 2300 | 2400 | 16.7 | Tape and Reel | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF5S9080NBR1
Trans RF MOSFET N-CH 65V 5-Pin TO-272 W T/R
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NXP Semiconductors | RF MOSFET | Single Dual Drain Dual Gate | N | Enhancement | 1 | GSM|GSM EDGE | 65 | 15 | 80 | 869 | 960 | 18.5|19 | Tape and Reel | 5 | TO-272 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYV415W-600PQ
Diode Switching 600V 30A 3-Pin(3+Tab) TO-247
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NXP Semiconductors | Rectifiers | Switching Diode | Dual Common Cathode | 600 | 30 | 150 | 2.1@15A | 10 | 50 | 3 | TO-247 | No | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFG505,215
Trans RF BJT NPN 15V 0.018A 150mW 4-Pin(3+Tab) SOT-143B T/R
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NXP Semiconductors | BJT FR | NPN | Si | Single Dual Emitter | 15 | 20 | 1 | 2.5 | 0.018 | 60@5mA@6V | 50 to 120 | 9000(Typ) | 150 | 20 | 2.1 | Tape and Reel | 4 | SOT-143B | SOT | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-B2V7,115
Diode Zener Single 2.7V 2% 500mW 2-Pin Mini-MELF T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 2.7 | 2% | 5 | 0.9 | 20 | 100 | 450 | 500 | Tape and Reel | 2 | Mini-MELF | MELF | No | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZX884-B51,315
Diode Zener Single 51V 2% 250mW Automotive AEC-Q101 2-Pin DFN T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 51 | 2% | 2 | 0.9 | 0.05 | 180 | 250 | 40 | 250 | Tape and Reel | 2 | DFN | DFN | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRFE6VP61K25GNR6 RF MOSFET Transistor |
$284.76
Par unité
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NXP Semiconductors | RF MOSFET | Pulse | 1.8 | 600 | 23 | 5 | Case OM-1230G | No | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFX1K80H-27MHZ
Trans RF MOSFET N-CH 179V 5-Pin NI-1230H
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De $1,968.75 à $2,067.99
Par unité
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NXP Semiconductors | RF MOSFET | MOSFET | Dual Common Source | N | Enhancement | 2 | CW | 179 | 10 | 760@65V | 1800(Typ) | 2247000 | 1.8 | 400 | 27.8 | 5 | NI-1230H | No | No | No | No | 3B992 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF8VP13350NR5 Trans RF MOSFET N-CH 100V 5-Pin OM-780 EP T/R |
$242.48
Par unité
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NXP Semiconductors | RF MOSFET | N | Enhancement | CW | 100 | 10 | 350 | 700 | 1300 | 20.7 | 5 | OM-780 EP | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1216,115
Trans RF MOSFET N-CH 6V 0.03A 6-Pin TSSOP T/R
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NXP Semiconductors | RF MOSFET | Dual | N | Enhancement | 2 | 6 | 1 | 0.03 | 2.5@5V@Gate 1|2.4@5V@Gate 2 | 180 | 34 | 5 | Tape and Reel | 6 | TSSOP | SO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAS85,115
Diode Schottky 0.2A 2-Pin Mini-MELF T/R
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NXP Semiconductors | Rectifiers | Schottky Diode | Single | 0.2 | 5 | 0.8@0.1A | 2.3@25V | Tape and Reel | 2 | Mini-MELF | MELF | No | Yes | No | No | No | No | EAR99 | Yes | No |