Infineon Technologies AG Diodes, Transistors and Thyristors
8 154 Infineon Technologies AG Diodes, Transistors and Thyristors
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| N° de référence | Prix | Stock | Fabricant | Catégorie | Type | Technology | Number of SCRs/Diodes | Maximum Rate of Rise of Off-State Voltage - (V/us) | Maximum Breakover Voltage - (V) | Category | Bridge Type | Surge Current Rating - (A) | Material | Diode Type | Configuration | Channel Type | Maximum Reverse Voltage - (V) | Maximum Rate of Rise of On-State Current - (A/us) | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Repetitive Peak Forward Blocking Voltage - (V) | Peak RMS Reverse Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Continuous DC Collector Current - (A) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Minimum DC Current Gain | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Typical Gate Charge @ Vgs - (nC) | RMS On-State Current - (A) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Ambient Thermal Resistance | Frequency Band | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Minimum Frequency - (MHz) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Maximum Drain-Source Resistance - (Ohm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IRFI4110GPBF
Trans MOSFET N-CH Si 100V 72A 3-Pin(3+Tab) TO-220FP Tube
|
Stock
3 773
De $1.851 à $4.301
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Si | Single | N | Enhancement | 1 | 100 | ±20 | 4 | 72 | 190@10V | 190 | 9540@50V | 61000 | 4.5@10V | 3.7@10V | Tube | 3 | TO-220FP | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FS150R12KT3BOSA1
Trans IGBT Module N-CH 1200V 200A 700W 35-Pin ECONO3-4 Tray
|
Stock
10
$167.02
Par unité
|
Infineon Technologies AG | Module IGBT | Hex | N | ±20 | 1200 | 200 | 700 | Tray | 35 | ECONO3-4 | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF6715MTRPBF
Trans MOSFET N-CH Si 25V 34A 7-Pin Direct-FET MX T/R
|
Stock
295
De $1.747 à $2.262
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Si | Single Quad Drain Dual Source | N | Enhancement | 1 | 25 | ±20 | 2.4 | 34 | 40@4.5V | 5340@13V | 2800 | 1.6@10V | 1.3@10V|2.1@4.5V | Tape and Reel | 7 | Direct-FET MX | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAS40E8224HTMA1 Diode Schottky 0.12A |
Stock
20 000
De $0.0254 à $0.0304
Par unité
|
Infineon Technologies AG | Rectifiers | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FS13MR12W2M1HC55BPSA1
Trans MOSFET N-CH SiC 1.2KV 62.5A 38-Pin Tray
|
Stock
12
$151.20
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | SiC | Hex | N | Enhancement | 6 | 1200 | 20 | 62.5 | 200@18V | 6050@800V | 11.7(Typ)@18V | Tray | 38 | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ010NE2LS5ATMA1
Trans MOSFET N-CH 25V 32A 8-Pin TSDSON EP T/R
|
Stock
4 900
De $1.00 à $2.34
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single Quad Drain Triple Source | N | Enhancement | 1 | 25 | 16 | 2 | 32 | 21@4.5V | 3000@12V | 2100 | 1@10V | 0.8@10V|1@4.5V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKW75N65EL5XKSA1
Trans IGBT Chip N-CH 650V 80A 536W 3-Pin(3+Tab) TO-247 Tube
|
Stock
222
$3.086
Par unité
|
Infineon Technologies AG | Puce IGBT | Trench Stop 5 | Single | N | ±20 | 650 | 80 | 536 | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDP30E120XKSA1
Diode Switching 1.2KV 50A 2-Pin(2+Tab) TO-220 Tube
|
Stock
27 045
De $0.9208 à $2.6212
Par unité
|
Infineon Technologies AG | Rectifiers | Switching Diode | Single | 1200 | 50 | 102 | 2.15@30A | 100 | 243(Typ) | 138000 | Tube | 2 | TO-220 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPN65R1K5CEATMA1
Trans MOSFET N-CH 650V 5.2A 3-Pin SOT-223 T/R
|
Stock
6 000
De $0.1155 à $0.1187
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single | N | Enhancement | 1 | 650 | 20 | 3.5 | 5.2 | 10.5@10V | 75 | 10.5 | 225@100V | 5000 | 1500@10V | 1350@10V | Tape and Reel | 3 | SOT-223 | SOT | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPT012N08N5ATMA1
Trans MOSFET N-CH 80V 56A 9-Pin(8+Tab) HSOF T/R
|
Stock
1 006
De $3.73 à $5.68
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single Seven Source | N | Enhancement | 1 | 80 | 20 | 3.8 | 56 | 178@10V | 62 | 0.4 | 178 | 13000@40V | 375000 | 1.2@10V | 1@10V|1.3@6V | Tape and Reel | 9 | HSOF | SO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPDQ60T022S7AXTMA1
Trans MOSFET N-CH 600V 90A 22-Pin HDSOP EP T/R Automotive AEC-Q101
|
Stock
10
De $6.6969 à $3.959
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single Dual Gate Octal Source Eleven Drain | N | Enhancement | 1 | 600 | 20 | 90 | 150@12V | 5640@300V | 416000 | 22@12V | 22 | HDSOP EP | SO | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF1800R17IP5BPSA1
Trans IGBT Module N-CH 1700V 1.8KA 14-Pin Tray
|
Stock
2
$925.63
Par unité
|
Infineon Technologies AG | Module IGBT | Dual | N | ±20 | 1700 | 1800 | Tray | 14 | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DDB6U104N16RRBPSA1
IGBT Module Single Chopper
|
Stock
10
De $56.53 à $60.80
Par unité
|
Infineon Technologies AG | Module IGBT | 19 | ECONO2B | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP7430PBF
Trans MOSFET N-CH Si 40V 404A 3-Pin(3+Tab) TO-247AC Tube
|
Stock
2 884
De $1.3177 à $0.5063
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Si | Single | N | Enhancement | 1 | 40 | ±20 | 3.9 | 404 | 300@10V | 40 | 0.41 | 300 | 14240@25V | 2130 | 366000 | 1.3@10V | 1@10V|1.2@6V | Tube | 3 | TO-247AC | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA60R600P7XKSA1
Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220FP Tube
|
Stock
1 700
De $0.512 à $1.1963
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single | N | Enhancement | 1 | 600 | 20 | 4 | 6 | 9@10V | 62 | 5.98 | 9 | 363@400V | 21000 | 600@10V | 490@10V | Tube | 3 | TO-220FP | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT60BE6327HTSA1
Diode Schottky 3A 2-Pin SOD-323 T/R Automotive AEC-Q101
|
Stock
386
De $0.0847 à $0.0997
Par unité
|
Infineon Technologies AG | Rectifiers | Schottky Diode | Single | 3 | 5 | 0.6@1A | 25@8V | 1350 | Tape and Reel | 2 | SOD-323 | SOD | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPS65R950C6
Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-251 Tube
|
Stock
250
De $0.428 à $0.828
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single | N | Enhancement | 1 | 650 | 20 | 3.5 | 4.5 | 15.3@10V | 15.3 | 328@100V | 37000 | 950@10V | Tube | 3 | TO-251 | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW95R310PFD7XKSA1
Trans MOSFET N-CH 950V 17.5A 3-Pin(3+Tab) TO-247 Tube
|
Stock
480
$1.2528
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single | N | Enhancement | 1 | 950 | 20 | 17.5 | 61@10V | 61 | 1765@400V | 125000 | 310@10V | Tube | 3 | TO-247 | TO | No | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSR802NL6327HTSA1
Trans MOSFET N-CH 20V 3.7A 3-Pin SC-59 T/R Automotive AEC-Q101
|
Stock
262
De $0.273 à $0.428
Par unité
|
Infineon Technologies AG | MOSFET | Small Signal | Single | N | Enhancement | 1 | 20 | ±8 | 3.7 | 4.7@2.5V | 1013@10V | 500 | 23@2.5V | Tape and Reel | 3 | SC-59 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD60R1K0CEAUMA1
Trans MOSFET N-CH 600V 6.8A 3-Pin(2+Tab) DPAK T/R
|
Stock
15 000
De $0.2093 à $0.227
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single | N | Enhancement | 1 | 600 | 20 | 3.5 | 6.8 | 13@10V | 62 | 3.41 | 13 | 280@100V | 61000 | 1000@10V | 860@10V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BBY5502VH6327XTSA1
Varactor Diode Single 16V 17.5pF 2-Pin SC-79 T/R
|
Stock
342 011
De $0.1512 à $0.1518
Par unité
|
Infineon Technologies AG | Varactor | Tuner|VCO | Single | 16 | 0.003 | 0.02 | 2 | 2V/10V | 17.5@1V | Tape and Reel | 2 | SC-79 | No | No | Unknown | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMZC120R078M2HXKSA1
Trans MOSFET N-CH SiC 1.2KV 28A Automotive 4-Pin(4+Tab) TO-247 Tube
|
Stock
133
De $3.844 à $4.126
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | SiC | Single Dual Source | N | Enhancement | 1 | 1200 | 23 | 28 | 21@18V | 700@800V | 143000 | 204@18V | Tube | 4 | TO-247 | TO | No | Yes | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB35N10S3L26ATMA2
Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
|
Stock
1 000
$1.4261
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single | N | Enhancement | 1 | 100 | ±20 | 35 | 30@10V | 2070@25V | 71000 | 26.3@10V | 3 | D2PAK | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB60R045P7ATMA1
Trans MOSFET N-CH 600V 61A 3-Pin(2+Tab) D2PAK T/R
|
Stock
696
De $2.9491 à $1.1043
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Single | N | Enhancement | 1 | 600 | 20 | 4 | 61 | 90@10V | 90 | 3891@400V | 201000 | 45@10V | 38@10V | 3 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPG20N06S2L65ATMA1
Trans MOSFET N-CH 55V 20A 8-Pin TDSON EP T/R Automotive AEC-Q101
|
Stock
5 000
$0.3837
Par unité
|
Infineon Technologies AG | MOSFET | Power MOSFET | Dual Dual Drain | N | Enhancement | 2 | 55 | ±20 | 2 | 20 | 9.4@10V | 9.4 | 315@25V | 43000 | 65@10V | 53@10V|67@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes |