ADGM1121: 0 Hz/DC to 18 GHz, DPDT, MEMS switch
Microelectromechanical system (MEMs)18 Apr 2024
The ADGM1121 features an integrated driver chip that generates a high voltage to electrostatically actuate a switch that can be controlled by a parallel interface and a serial peripheral interface (SPI). All switches are independently controllable.
The device is packaged in a 24-lead, 5 mm × 4 mm × 1 mm land grid array (LGA) package. To ensure optimum operation of the ADGM1121, see the Critical Operational Requirements section of the data sheet.
The on-resistance (RON) performance of the ADGM1121 is affected by part-to-part variation, channel-to-channel variation, cycle actuations, settling time post-turn-on, bias voltage, and temperature changes.
Key Features and Benefits
- DC to 18 GHz frequency range
- High bit rate capability up to 64 Gbps
- Low insertion loss
- 0.5 dB (typical) at 8 GHz
- 1.0 dB (typical) at 16 GHz
- High Input IIP3: 73 dBm (typical)
- High RF power handling: 33 dBm (maximum)
- On-resistance: 1.9 Ω (typical)
- High DC current handling: 200 mA
- High switch cycle count: 100 million cycles (minimum)
- Fast switching time: 200 μs TON (typical)
- Integrated 3.3 V driver for simple control with parallel interface and SPI
- Space-saving integrated passive including decoupling and shunt resistors
- Small 5 mm × 4 mm × 1 mm, 24-lead plastic package
- Temperature range: −40°C to +85°C
Applications
- ATE load and probe boards
- DC with high speed loopback testing
- High speed SerDes, PICe Gen4/5, USB4, PAM4
- Relay replacements
- Reconfigurable filters/attenuators
- Military and microwave radios
- Cellular infrastructure: 5G mm wave
Evaluation Board
The ADGM1121 can be evaluated with either the EVAL-ADGM1121.
Block Diagrams and Tables
Article Tags
Analog Devices
RF Switches
Microelectromechanical system (MEMs)
NPI
