Infineon Technologies AGIPB019N08N3GATMA1MOSFETs
Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quint Source | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 3.5 | |
| 180 | |
| 1.9@10V | |
| 155@10V | |
| 155 | |
| 10700@40V | |
| 300000 | |
| 33 | |
| 73 | |
| 86 | |
| 28 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 4.57(Max) mm |
| Package Width | 9.45(Max) mm |
| Package Length | 10.31(Max) mm |
| PCB changed | 6 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 7 | |
| Lead Shape | Gull-wing |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPB019N08N3GATMA1 power MOSFET. Its maximum power dissipation is 300000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.
| EDA / CAD Models |
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