Infineon Technologies AGIPB019N08N3GATMA1MOSFET

Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R

Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPB019N08N3GATMA1 power MOSFET. Its maximum power dissipation is 300000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.

1 348 pièces: Prêt à être expédié le lendemain

    Total$3.44Price for 1

    • Prêt à être expédié le lendemain

      Ships from:
      États Unis
      Date Code:
      2236+
      Manufacturer Lead Time:
      18 semaines
      Minimum Of :
      1
      Maximum Of:
      1348
      Country Of origin:
      Corée (du Sud)
         
      • Price: $3.444
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Prêt à être expédié le lendemain

      Ships from:
      États Unis
      Date Code:
      2236+
      Manufacturer Lead Time:
      18 semaines
      Country Of origin:
      Corée (du Sud)
      • In Stock: 1 348 pièces
      • Price: $3.444

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