Infineon Technologies AGIPB019N08N3GATMA1MOSFETs

Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R

Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPB019N08N3GATMA1 power MOSFET. Its maximum power dissipation is 300000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.

1.348 pezzi: Spedisce tra 2 giorni

    Total$3.44Price for 1

    • Spedisce tra 2 giorni

      Ships from:
      Stati Uniti d'America
      Date Code:
      2236+
      Manufacturer Lead Time:
      18 settimane
      Minimum Of :
      1
      Maximum Of:
      1348
      Country Of origin:
      Corea del Sud
         
      • Price: $3.444
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Spedisce tra 2 giorni

      Ships from:
      Stati Uniti d'America
      Date Code:
      2236+
      Manufacturer Lead Time:
      18 settimane
      Country Of origin:
      Corea del Sud
      • In Stock: 1.348 pezzi
      • Price: $3.444

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