Infineon Technologies AGIPB019N08N3GATMA1MOSFETs

Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R

Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPB019N08N3GATMA1 power MOSFET. Its maximum power dissipation is 300000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.

库存总量: 2,348 个零件

Regional Inventory: 1,348

    Total$3.48Price for 1

    1,348 In stock: 可以明天配送

    • 可以明天配送

      Ships from:
      美国
      Date Code:
      2236+
      Manufacturer Lead Time:
      18 星期
      Minimum Of :
      1
      Maximum Of:
      1348
      Country Of origin:
      韩国
         
      • Price: $3.478
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 可以明天配送

      Ships from:
      美国
      Date Code:
      2236+
      Manufacturer Lead Time:
      18 星期
      Country Of origin:
      韩国
      • In Stock: 1,348
      • Price: $3.478
    • (1000)

      可以在 2 天内配送

      Ships from:
      荷兰
      Date Code:
      2409+
      Manufacturer Lead Time:
      18 星期
      Country Of origin:
      马来西亚
      • In Stock: 1,000
      • Price: $2.8945

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