STMicroelectronicsSTLD128DNT4通用双极型晶体管
Trans GP BJT NPN 400V 3A 20000mW 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 400 | |
| 9 | |
| 1.2@0.2A@1A|1.3@0.4A@2A | |
| 1@0.2A@1A|1.5@0.4A@2A | |
| 3 | |
| 8@2A@5V|10@10mA@5V | |
| 20000 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Industrial | |
| Mounting | Surface Mount |
| Package Height | 2.4(Max) |
| Package Width | 6.2(Max) |
| Package Length | 6.6(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
If your circuit's specifications require a device that can handle high levels of voltage, STMicroelectronics' NPN STLD128DNT4 general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 20000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V.
| EDA / CAD Models |
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