STMicroelectronicsSTLD128DNT4GP BJT
Trans GP BJT NPN 400V 3A 20000mW 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 400 | |
| 9 | |
| 1.2@0.2A@1A|1.3@0.4A@2A | |
| 1@0.2A@1A|1.5@0.4A@2A | |
| 3 | |
| 8@2A@5V|10@10mA@5V | |
| 20000 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Industrial | |
| Mounting | Surface Mount |
| Package Height | 2.4(Max) |
| Package Width | 6.2(Max) |
| Package Length | 6.6(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
If your circuit's specifications require a device that can handle high levels of voltage, STMicroelectronics' NPN STLD128DNT4 general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 20000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V.
| EDA / CAD Models |
AI 기반 의료기기 설계
Arrow의 최신 백서에서 진단 및 치료 솔루션을 더 빠르고 안전하게 개발할 수 있는 시스템 설계 팁, 부품 추천 및 AI 인사이트를 확인하세요.