Toshiba Diodes, Transistors and Thyristors
| 型号 | 价格 | 库存 | 供应商 | 类别 | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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1SS427,L3M(T
Diode Switching Si 85V 0.2A 2-Pin SOD-923 T/R
|
库存
10,000
$0.0438
每个
|
Toshiba | Rectifiers | Switching Diode | Si | Single | 85 | 0.2 | 1 | 1.2@0.1A | 0.5@80V | 0.3(Typ) | 1600(Typ) | 150 | Tape and Reel | 2 | SOD-923 | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCP8003-H(TE85L,F
Trans MOSFET N-CH Si 100V 2.2A 8-Pin PS T/R
|
库存
1,160
从 $0.159 到 $0.208
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 2.2 | 180@10V | 4.5@5V|7.5@10V | 7.5 | 1680 | 360@10V | Tape and Reel | 8 | PS | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK1Q90A(Q) Trans MOSFET N-CH Si 900V 1A 3-Pin(3+Tab) New PW-Mold2 Bag |
库存
340
$1.10
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 1 | 9000@10V | 13@10V | 13 | 20000 | 320@25V | Bag | 3 | New PW-Mold2 | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN2R203NC,L1Q
Trans MOSFET N-CH Si 30V 100A 8-Pin TSON EP Advance T/R
|
库存
231,900
$0.2036
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 100 | 2.2@10V | 34@10V | 34 | 1900 | 2230@15V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GT15J341,S4X(S
Trans IGBT Chip N-CH 600V 15A 30W 3-Pin(3+Tab) TO-220SIS Magazine
|
库存
50
从 $1.14 到 $1.92
每个
|
Toshiba | IGBT 芯片 | N | Single | ±25 | 600 | 15 | 30 | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N44FE,LM
Trans MOSFET N-CH Si 30V 0.1A 6-Pin ES T/R Automotive AEC-Q101
|
库存
4,000
从 $0.0487 到 $0.3348
每个
|
Toshiba | MOSFETs | Small Signal | Si | N | Dual | Enhancement | 2 | 30 | ±10@N Channel|±8@P Channel | 1.5 | 0.1 | 4000@4V | 1.23@4V@N Channel|1.2@4V@P Channel | 150 | 8.5@3V | Tape and Reel | 6 | ES | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTC015B,Q(S)
Trans GP BJT NPN 80V 2A 1500mW 3-Pin TO-126N Sack
|
库存
39
$0.399
每个
|
Toshiba | 通用双极型晶体管 | NPN | Bipolar Power | Si | Single | 80 | 1 | 160 | 7 | 1.5@100mA@1A | 2 | 50 to 120 | 80@1mA@2V|100@0.5A@2V|60@1A@2V | 1500 | 0.3@5mA@0.5A|0.5@100mA@1A | Sack | 3 | TO-126N | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K347R,LF
Trans MOSFET N-CH Si 38V 2A Automotive AEC-Q101 3-Pin SOT-23F T/R
|
库存
2
$0.0632
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 38 | ±20 | 2 | 340@10V | 2.5@10V | 2.5 | 2000 | 86@10V | Tape and Reel | 3 | SOT-23F | SOT | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK090N65Z,S1F(S
Trans MOSFET N-CH Si 650V 30A 3-Pin(3+Tab) TO-247
|
库存
120
$2.7677
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 30 | 90@10V | 47@10V | 230000 | 2780@300V | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK090A65Z,S4X(S
Trans MOSFET N-CH Si 650V 30A 3-Pin(3+Tab) TO-220SIS
|
库存
4
$3.48
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 30 | 90@10V | 47@10V | 45000 | 2780@300V | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6J412TU,LF(T
Trans MOSFET P-CH Si 20V 4A 6-Pin UF T/R
|
库存
2,475
从 $0.15 到 $0.25
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain | Enhancement | 1 | 20 | ±8 | 1 | 4 | 42.7@4.5V | 12.8@4.5V | 1000 | 840@10V | Tape and Reel | 6 | UF | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK4R3E06PL,S1X(S
Trans MOSFET N-CH Si 60V 106A 3-Pin(3+Tab) TO-220
|
库存
15
从 $1.03 到 $2.11
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 106 | 4.3@10V | 23.9@4.5V|48.2@10V | 87000 | 3280@30V | 3 | TO-220 | TO | No | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TK9A90E,S4X(S
Trans MOSFET N-CH Si 900V 9A 3-Pin(3+Tab) TO-220SIS Tube
|
库存
20
从 $1.62 到 $3.34
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 4 | 9 | 1300@10V | 46@10V | 46 | 50000 | 2000@25V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK16J55D(F)
Trans MOSFET N-CH Si 550V 16A 3-Pin(3+Tab) TO-3PN
|
库存
67
从 $1.16 到 $1.95
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 550 | ±30 | 16 | 370@10V | 40@10V | 40 | 250000 | 2300@25V | 3 | TO-3PN | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2421(TE85L,F)
Trans Digital BJT PNP 50V 0.8A 200mW 3-Pin S-Mini T/R
|
库存
2,180
从 $0.168 到 $0.378
每个
|
Toshiba | 数字双极型晶体管 | PNP | Single | 50 | 1 | 1 | 0.8 | 60@100mA@1V | 200 | 0.25@2mA@50mA | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TK10A60W,S4VX
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Magazine
|
库存
20
$1.149
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 9.7 | 380@10V | 20@10V | 20 | 30000 | 700@300V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CRH01(T5L,TEMQ)
Diode Switching 200V 1A 2-Pin S-FLAT T/R
|
库存
2,011
从 $0.0422 到 $0.116
每个
|
Toshiba | Rectifiers | Switching Diode | Single | 200 | 1 | 15 | 0.98 | 10 | 35 | Tape and Reel | 2 | S-FLAT | No | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TK380A60Y,S4X
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Tube
|
库存
4
$0.4598
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4 | 9.7 | 380@10V | 20@10V | 20 | 30000 | 590@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CSLZ6V8,L3F | 6.8V ZNR DIODE SOD-962 OVP
Diode Zener Single 6.8V 6% 400mW 2-Pin SL T/R
|
库存
7,340
从 $0.0096 到 $0.0473
每个
|
Toshiba | 齐纳二极管 | Voltage Regulator | Single | 6.8 | 6% | 5 | 0.5 | 30 | 400 | 400 | Tape and Reel | 2 | SL | SOD | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K16FU,LF
Trans MOSFET N-CH Si 20V 0.1A 3-Pin USM T/R Automotive AEC-Q101
|
库存
87
从 $0.043 到 $0.1368
每个
|
Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 20 | ±10 | 0.1 | 3000@4V | 150 | 9.3@3V | Tape and Reel | 3 | USM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW015Z65C,S1F
Trans MOSFET N-CH SiC 650V 100A 4-Pin(4+Tab) TO-247 Tube
|
库存
30
$33.85
每个
|
Toshiba | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 650 | 25 | 100 | 22@18V | 128@18V | 342000 | 4850@400V | Tube | 4 | TO-247 | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH6R30ANL,L1Q(M
Trans MOSFET N-CH Si 100V 66A 8-Pin SOP Advance T/R
|
库存
920
从 $0.552 到 $1.11
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 100 | ±20 | 66 | 6300@10V | 27@4.5V|55@10V | 2500 | 3300@50V | 8 | SOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TTC013(TE12L,C,ZE)
Trans GP BJT NPN 350V 0.5A 1000mW 4-Pin(3+Tab) PW-Mini T/R
|
库存
100
从 $0.119 到 $0.144
每个
|
Toshiba | 通用双极型晶体管 | NPN | Bipolar Power | Si | Single Dual Collector | 350 | 1 | 600 | 7 | 1.1@20mA@0.16A | 0.5 | 30 to 50|50 to 120 | 80@1mA@5V|100@50mA@5V|30@0.16A@5V | 1000 | 0.3@20mA@0.16A | Tape and Reel | 4 | PW-Mini | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TPCC8104,L1Q(CM
Trans MOSFET P-CH Si 30V 20A 8-Pin TSON EP Advance T/R
|
库存
1,953
从 $0.215 到 $0.412
每个
|
Toshiba | MOSFETs | Power MOSFET | Si | P | Single Quad Drain Triple Source | Enhancement | 1 | 30 | 20 | 20 | 8.8@10V | 58@10V | 1900 | 2260@10V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
2SJ305TE85LF
Trans MOSFET P-CH Si 30V 0.2A 3-Pin S-Mini T/R
|
库存
5,272
从 $0.241 到 $0.758
每个
|
Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 30 | ±20 | 0.2 | 4000@2.5V | 200 | 92@3V | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | No | EAR99 | No |