NXP Semiconductors 二极管、晶体管及晶闸管
| 型号 | 价格 | 库存 | 供应商 | 类别 | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Regulator Current - (mA) | Maximum Gate Trigger Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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MRF300AN
Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-247 Tube
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库存
240
$59.9033
每个
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NXP Semiconductors | 射频 MOSFETs | MOSFET | N | Single | Enhancement | 1 | CW | 133 | 10 | 272000 | 403@50V | 1.8 | 330(Typ) | 28.2 | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE6VP5600HR6
Trans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R
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库存
75
从 $253.28 到 $323.48
每个
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NXP Semiconductors | 射频 MOSFETs | N | Dual Common Source | Enhancement | 2 | CW | 130 | 10 | 1667000 | 342@50V | 1.8 | 600(Typ) | 25 | Tape and Reel | 5 | Case 375D-05 | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Top Searched
BFU550XAR
Trans RF BJT NPN 16V 0.08A 450mW Automotive 4-Pin SOT-143B T/R
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$0.1821
每个
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NXP Semiconductors | 射频双极型晶体管 | NPN | Si | Single Dual Emitter | 16 | 1 | 30 | 3 | 0.08 | 8V/25mA | 50 to 120 | 60@15mA@8V | 1.11 | 450 | 0.72 | 13.5(Typ) | 26.5 | 23 | 11000(Typ) | 1.3(Min) | Tape and Reel | 4 | SOT-143B | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Top Searched
BB173X
Varactor Diode Single 35V 34.65pF 2-Pin SOD-523 T/R
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从 $0.1402 到 $0.1693
每个
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NXP Semiconductors | 变容二极管 | VCO | VHF | Single | 35 | 0.01 | 0.02 | 13.5 | 1V/28V | 34.65@1V | Tape and Reel | 2 | SOD-523 | SOD | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Top Searched
BB201,215
Diode VAR Cap Dual Common Cathode 15V 89pF 3-Pin TO-236AB T/R
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NXP Semiconductors | 变容二极管 | Tuner|VCO | Dual Common Cathode | 15 | 0.01 | 0.02 | 3.1 | 1V/7.5V | 89@1V | Tape and Reel | 3 | TO-236AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1118R,215
Trans RF FET 3V 0.01A 4-Pin(3+Tab) SOT-143R T/R
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NXP Semiconductors | 射频 MOSFETs | Si | Single | Depletion | 1 | 3 | 7 | 0.01 | 23.3@0V | 1 | Tape and Reel | 4 | SOT-143R | SOT | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BLF6G10LS-135R,112
Trans RF MOSFET N-CH 65V 32A 3-Pin SOT-502B Blister
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NXP Semiconductors | 射频 MOSFETs | N | Single | Enhancement | 1 | 2-Carrier W-CDMA | 65 | 13 | 32 | 100(Typ)@6.15V | 700 | 26.5(Typ) | 21 | 0.14um | Blister | 3 | SOT-502B | SOT | No | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BTA216-600D,127
TRIAC 600V 150A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | TRIACs | 100 | 30(Min) | 0.5 | 1.5 | 5 | 15 | 600 | 1.5@20A | 600 | Rail | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFG425W
Trans RF BJT NPN 4.5V 0.03A 135mW 4-Pin(3+Tab) CMPAK
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NXP Semiconductors | 射频双极型晶体管 | NPN | Si | Single Dual Emitter | 4.5 | 1 | 10 | 1 | 0.03 | 2V/25mA | 50 to 120 | 50@25mA@2V | 0.575 | 135 | 0.3 | 12(Typ) | 20 | 22 | 25000(Typ) | 1.2(Typ) | 4 | CMPAK | SOT | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFG505,215
Trans RF BJT NPN 15V 0.018A 150mW 4-Pin(3+Tab) SOT-143B T/R
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NXP Semiconductors | 射频双极型晶体管 | NPN | Si | Single Dual Emitter | 15 | 1 | 20 | 2.5 | 0.018 | 50 to 120 | 60@5mA@6V | 150 | 20 | 9000(Typ) | 2.1 | Tape and Reel | 4 | SOT-143B | SOT | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PSMN3R2-25YLC,115
Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R
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NXP Semiconductors | MOSFETs | Power MOSFET | N | Single Triple Source | Enhancement | 1 | 25 | 20 | 100 | 3.4@10V | 26@10V|30@10V|14@4.5V | 26|30 | 79000 | 1781@12V | Tape and Reel | 5 | LFPAK | FPAK | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF8S9120NR3
Trans RF MOSFET N-CH 70V 3-Pin Case 2021-0 T/R
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NXP Semiconductors | 射频 MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA|CDMA | 70 | 10 | 700 | 33(Typ) | 19.8 | Tape and Reel | 3 | Case 2021-0 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAP65LX,315
Diode PIN Attenuator/Switch 30V 100mA 2-Pin SOD T/R Automotive AEC-Q101
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NXP Semiconductors | PIN | Attenuator|Switch | Single | 30 | 100 | 0.9@10mA | 1.1@50mA | 0.95@5mA | 0.7@3V | 0.18 | 135 | 2 | SOD | SOD | No | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BT169B,126
SCR Diode 200V 0.8A(RMS) 9A 3-Pin SPT Ammo
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NXP Semiconductors | Silicon Controlled Rectifiers - SCRs | 50 | 800(Typ) | 0.1 | 0.8 | 0.2 | 5 | 200 | 5 | 1.7@1.2A | 200 | 0.5 | 0.8 | Ammo | 3 | SPT | No | Unknown | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFV141KGSR5 RF POWER LDMOS TRANSISTORS |
从 $707.34 到 $738.00
每个
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NXP Semiconductors | 射频 MOSFETs | Pulse | 1200 | 1000 | 17.7 | Tape and Reel | 5 | NI-1230S | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A2T21S160-12SR3 RF Power LDMOS Transistor |
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NXP Semiconductors | 射频 MOSFETs | 2110 | Tape and Reel | 5 | CFMF | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZX884-B30,315
Zener Diode Single 30V 2% 80Ohm 250mW Automotive AEC-Q101 2-Pin DFN T/R
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NXP Semiconductors | 齐纳二极管 | Voltage Regulator | Single | 30 | 2% | 2 | 0.9 | 0.05 | 80 | 250 | 50 | 250 | Tape and Reel | 2 | DFN | DFN | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMEG2005EPK,315
Diode Schottky 0.7A 2-Pin DFN-D T/R
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NXP Semiconductors | Rectifiers | Schottky Diode | Single | 0.7 | 3 | 0.41@0.5A | 300 | 3(Typ) | 1470 | Tape and Reel | 2 | DFN-D | DFN | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1102,115
Trans RF MOSFET N-CH 7V 0.04A 6-Pin TSSOP T/R
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NXP Semiconductors | 射频 MOSFETs | N | Dual | Enhancement | 2 | 7 | 6 | 0.04 | 200 | 2.8@5V@Gate 1|7(Max)@5V@Gate 2 | 2.8 | Tape and Reel | 6 | TSSOP | SO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFG24S100HR5 Wide Band RF Power Gan Transistor, 1-2690 MHz, 125 W CW, 50 V |
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NXP Semiconductors | 射频 MOSFETs | 3 | NI-360H-2SB | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZV55-B7V5,115
Diode Zener Single 7.5V 2% 500mW 2-Pin Mini-MELF T/R
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NXP Semiconductors | 齐纳二极管 | Voltage Regulator | Single | 7.5 | 2% | 5 | 0.9 | 1 | 15 | 150 | 500 | Tape and Reel | 2 | Mini-MELF | MELF | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFT23H160-25SR3 High Reliability RF FET IC |
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NXP Semiconductors | 射频 MOSFETs | 2300 | 16.7 | Tape and Reel | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF5S9080NBR1
Trans RF MOSFET N-CH 65V 5-Pin TO-272 W T/R
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NXP Semiconductors | 射频 MOSFETs | N | Single Dual Drain Dual Gate | Enhancement | 1 | GSM|GSM EDGE | 65 | 15 | 869 | 80 | 18.5|19 | Tape and Reel | 5 | TO-272 W | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFG541,115
Trans RF BJT NPN 15V 0.12A 650mW 4-Pin(3+Tab) SC-73 T/R
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NXP Semiconductors | 射频双极型晶体管 | NPN | Si | Single Dual Emitter | 15 | 1 | 20 | 2.5 | 0.12 | 8V/40mA | 50 to 120 | 60@40mA@8V | 2 | 650 | 1 | 21(Typ) | 15 | 34 | 9000(Typ) | 1.8 | Tape and Reel | 4 | SC-73 | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A3T23H450W23SR6 RF Power LDMOS Transistor |
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NXP Semiconductors | 射频 MOSFETs | 2300 | Tape and Reel | 7 | ACP-1230S-4L2S | No | No | No | No | EAR99 | Yes | No |