Infineon Technologies AG Diodes, Transistors and Thyristors
| 型号 | 价格 | 库存 | 供应商 | 类别 | Type | Technology | Number of SCRs/Diodes | Maximum Rate of Rise of Off-State Voltage - (V/us) | Maximum Breakover Voltage - (V) | Category | Bridge Type | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Diode Type | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Peak RMS Reverse Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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FS3L400R10W3S7FB11BPSA1
Trans IGBT Module N-CH 950V 120A 52-Pin Tray
|
库存
8
$56.50
每个
|
Infineon Technologies AG | IGBT 模块 | N | Hex | ±20 | 950 | 120 | Tray | 52 | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPDQ60R035CFD7XTMA1
Trans MOSFET N-CH 600V 68A 22-Pin HDSOP EP T/R
|
库存
66
从 $4.699 到 $6.129
每个
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Ten Source Eleven Drain | Enhancement | 1 | 600 | 20 | 367000 | 68 | 35@10V | 108@10V | 108 | 4346@400V | Tape and Reel | 22 | HDSOP EP | SO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGP30N65F5XKSA1
Trans IGBT Chip N-CH 650V 55A 188W 3-Pin(3+Tab) TO-220 Tube
|
库存
497
从 $1.17 到 $2.67
每个
|
Infineon Technologies AG | IGBT 芯片 | Trench Stop 5 | N | Single | ±20 | 650 | 55 | 188 | Tube | 3 | TO-220 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FS3L200R10W3S7FB11BPSA1 3-Level IGBT Module |
库存
8
$32.29
每个
|
Infineon Technologies AG | IGBT 模块 | 32 | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FP10R06W1E3BOMA1
IGBT Power Module
|
库存
23
从 $31.40 到 $32.00
每个
|
Infineon Technologies AG | IGBT 模块 | 600 | Tray | 15 | EASY1B-1 | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFR843EL3E6327XTSA1
Trans RF BJT NPN 2.25V 0.055A 125mW 3-Pin TSLP T/R Automotive AEC-Q101
|
库存
6
$0.3396
每个
|
Infineon Technologies AG | 射频双极型晶体管 | NPN | SiGe | Single | 2.25 | 2.9 | 1 | 0.055 | 1.8V/15mA | 125 | 200 to 300 | 230@1mA@1.8V | 5.26 | 25.5 | 7.5(Typ) | 23 | 1.35(Min) | Tape and Reel | 3 | TSLP | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCM856SH6433XTMA1
Trans GP BJT PNP 65V 0.1A 250mW 6-Pin SOT-363 T/R Automotive AEC-Q101
|
库存
19,364
$0.063
每个
|
Infineon Technologies AG | 通用双极型晶体管 | PNP | Bipolar Small Signal | Si | Dual | 65 | 80 | 2 | 5 | 0.7(Typ)@0.5mA@10mA|0.85(Typ)@5mA@100mA | 0.1 | 250 | 200 to 300 | 200@2mA@5V | 3 | 0.3@0.5mA@10mA|0.65@5mA@100mA | 10 | Tape and Reel | 6 | SOT-363 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DDB6U50N22W1RPB11BPSA1
Trans IGBT Module N-CH 1700V 40A 26-Pin Tray
|
库存
30
从 $9.235 到 $9.369
每个
|
Infineon Technologies AG | IGBT 模块 | N | Single | ±20 | 1700 | 40 | Tray | 26 | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKW50N65H5FKSA1
Trans IGBT Chip N-CH 650V 80A 305W 3-Pin(3+Tab) TO-247 Tube
|
库存
230
从 $2.01 到 $4.44
每个
|
Infineon Technologies AG | IGBT 芯片 | N | Single | ±20 | 650 | 80 | 305 | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP150MPBF
Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-247AC Tube
|
库存
1,469
$0.6115
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 160000 | 42 | 36@10V | 110(Max)@10V | 110(Max) | 1900@25V | Tube | 3 | TO-247AC | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TT425N16KOFHPSA3
SCR Module 1600V 800A(RMS) 14500A 7-Pin PB60AT-1 Tray
|
库存
1
$299.00
每个
|
Infineon Technologies AG | SCR Modules | 1000 | 120 | 1.5 | 1600 | 250 | 300 | 1.5@1500A | 800 | 1600 | 471 | 100 | Tray | 7 | PB60AT-1 | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAS4002LE6327XTMA1
Diode Schottky Si 0.12A 2-Pin TSLP T/R
|
库存
60,881
$0.0733
每个
|
Infineon Technologies AG | Rectifiers | Schottky Diode | Si | Single | 0.12 | 0.2 | 1@0.04A | 1@30V | 250 | 5 | Tape and Reel | 2 | TSLP | No | Yes | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Top Searched
FF150R12KS4HOSA1
Trans IGBT Module N-CH 1200V 225A 1250W 7-Pin 62MM-1 Tray
|
库存
7
$114.3732
每个
|
Infineon Technologies AG | IGBT 模块 | N | Dual | ±20 | 1200 | 225 | 1250 | Tray | 7 | 62MM-1 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDFW40E65D1EXKSA1
Diode Switching 650V 42A 3-Pin(3+Tab) TO-247 Tube
|
库存
273
$2.254
每个
|
Infineon Technologies AG | Rectifiers | Switching Diode | Single | 650 | 42 | 2.1@40A | 40 | 78000 | 232(Typ) | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AIDK12S65C5ATMA1
Diode Schottky SiC 650V 12A Automotive 3-Pin(2+Tab) TO-263 T/R
|
库存
940
从 $3.071 到 $5.122
每个
|
Infineon Technologies AG | Rectifiers | Schottky Diode | SiC | Single Dual Cathode | 650 | 12 | 50 | 1.7 | 70 | 62000 | 363(Typ) | Tape and Reel | 3 | TO-263 | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD500N16KOFHPSA2
Thyristor SCR Phase Control Thyristor Module 1.6kV 17kA 5-Pin Tray
|
库存
2
$220.00
每个
|
Infineon Technologies AG | SCR Modules | 1000 | 200 | 2.2 | 250 | 300 | 1.45@1700A | 900 | 100 | 5 | PB60AT-1 | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKQ75N120CH3XKSA1
Trans IGBT Chip N-CH 1200V 150A 938W 3-Pin(3+Tab) TO-247 Tube
|
库存
55
从 $7.927 到 $13.0889
每个
|
Infineon Technologies AG | IGBT 芯片 | N | Single | ±20 | 1200 | 150 | 938 | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF300R17KE4HOSA1
Trans IGBT Module N-CH 1700V 440A 1800W 7-Pin 62MM-1 Tray
|
库存
4
$114.42
每个
|
Infineon Technologies AG | IGBT 模块 | N | Dual | ±20 | 1700 | 440 | 1800 | Tray | 7 | 62MM-1 | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKWH40N65EH7XKSA1
Trans IGBT Chip N-CH 650V 80A 208W 3-Pin(3+Tab) TO-247 Tube
|
库存
23
$1.77
每个
|
Infineon Technologies AG | IGBT 芯片 | N | Single | ±20 | 650 | 80 | 208 | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF6785MTRPBF
Trans MOSFET N-CH Si 200V 3.4A 7-Pin Direct-FET MZ T/R
|
库存
95,210
从 $1.1439 到 $1.195
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Dual Source | Enhancement | 1 | 200 | ±20 | 5 | 2800 | 3.4 | 100@10V | 26@10V | 26 | 1500@25V | 85@10V | Tape and Reel | 7 | Direct-FET MZ | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFP4768PBF
Trans MOSFET N-CH 250V 93A 3-Pin(3+Tab) TO-247AC Tube
|
库存
2,300
从 $2.658 到 $2.93
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 250 | ±20 | 5 | 520000 | 93 | 17.5@10V | 180@10V | 180 | 10880@50V | Tube | 3 | TO-247AC | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FP10R12W1T4BOMA1
Trans IGBT Module N-CH 1200V 20A 105W 20-Pin EASY1B-1 Tray
|
库存
21
$31.38
每个
|
Infineon Technologies AG | IGBT 模块 | N | Array 7 | ±20 | 1200 | 20 | 105 | Tray | 20 | EASY1B-1 | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF40B207
Trans MOSFET N-CH Si 40V 95A 3-Pin(3+Tab) TO-220AB Tube
|
库存
126,625
从 $0.3729 到 $0.4087
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 40 | ±20 | 3.9 | 83000 | 95 | 4.5@10V | 45@10V | 45 | 2110@25V | 3.6@10V|5.4@6V | HEXFET | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FP35R12KT4BOSA1
Trans IGBT Module N-CH 1200V 35A 210W 23-Pin ECONO2-4
|
库存
3
$48.10
每个
|
Infineon Technologies AG | IGBT 模块 | N | Hex | ±20 | 1200 | 35 | 210 | 23 | ECONO2-4 | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FP75R12N3T7B11BPSA1
Trans IGBT Module N-CH 1200V 75A 35-Pin Tray
|
库存
10
$22.10
每个
|
Infineon Technologies AG | IGBT 模块 | Trench Stop | N | Hex | ±20 | 1200 | 75 | Tray | 35 | No | No | No | No | EAR99 | Yes | Yes |