Ampleon RF FETs
| 型号 | 价格 | 库存 | 供应商 | 类别 | Material | Configuration | Channel Mode | Channel Type | Number of Elements per Chip | Mode of Operation | Maximum Drain-Source Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum Gate Threshold Voltage - (V) | Maximum Continuous Drain Current - (A) | Maximum Drain-Source Resistance - (mOhm) | Typical Input Capacitance @ Vds - (pF) | Maximum Power Dissipation - (mW) | Type | Maximum Output Power - (W) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Frequency - (MHz) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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BLC10G27LS-320AVTY
Trans RF MOSFET N-CH 65V 7-Pin DFM T/R
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Ampleon | 射频 MOSFETs | Dual Common Source | Enhancement | N | 2 | 1-Carrier W-CDMA | 65 | 13 | 2.5 | 170@4.87V | MOSFET | 50(Typ) | 15.4 | 2500 | 2700 | 0.14um | Tape and Reel | 7 | DFM | No | Unknown | Unknown | Unknown | EAR99 | |||||||||||
BLC10G22XS-400AVTY
Trans RF MOSFET N-CH 65V 7-Pin DFM T/R
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Ampleon | 射频 MOSFETs | Dual Common Source | Enhancement | N | 2 | 1-Carrier W-CDMA | 65 | 9 | 2.5 | 128@6.25V | MOSFET | 440(Typ) | 16.3 | 2110 | 2200 | 0.14um | Tape and Reel | 7 | DFM | No | No | No | No | EAR99 | No | ||||||||||
BLC9G24XS-170AVY
Trans RF MOSFET N-CH 65V 7-Pin DFM T/R
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Ampleon | 射频 MOSFETs | Dual Common Source | Enhancement | N | 2 | 1-Carrier W-CDMA|Pulsed CW | 65 | 13 | 2.5 | 385@6.25V | 28(Typ) | 15.5 | 2300 | 2400 | 0.14um | Tape and Reel | 7 | DFM | No | EAR99 | No | ||||||||||||||
BLF184XRGQ
Trans RF MOSFET N-CH 135V 5-Pin LDMOST Rail
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Ampleon | 射频 MOSFETs | Dual Common Source | Enhancement | N | 2 | Pulsed RF | 135 | 11 | 2.25 | 160(Typ)@6V | 292@50V | 750 | 23.9 | 10 | 600 | 0.14um | Rail | 5 | LDMOST | No | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||
BLL6G1214L-250,112
Trans RF MOSFET N-CH 89V 3-Pin SOT-502A
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Ampleon | 射频 MOSFETs | Single | Enhancement | N | 1 | Pulsed RF | 89 | 11 | 2.4 | 127@3.75V | 285@40V | 250(Min) | 15 | 1200 | 1400 | 0.14um | Bulk | 3 | SOT-502A | SOT | No | No | Unknown | Unknown | Unknown | EAR99 | No | ||||||||
BLA9H0912LS-250GU
Trans RF MOSFET N-CH 106V 3-Pin SOT-502E Bulk
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Ampleon | 射频 MOSFETs | Single | Enhancement | N | 1 | Pulsed RF | 106 | 11 | 110(Typ)@6.25V | MOSFET | 250 | 22 | 960 | 1215 | 0.14um | Bulk | 3 | SOT-502E | SOT | Yes | No | Unknown | Unknown | Unknown | EAR99 | No | No | ||||||||
BLC10G18XS-602AVTY
Power LDMOS Transistor
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Ampleon | 射频 MOSFETs | Tape and Reel | 7 | DFM | No | ||||||||||||||||||||||||||||||
BLA6H0912L-1000U
Trans RF MOSFET N-CH 100V 5-Pin SOT-539A Bulk
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Ampleon | 射频 MOSFETs | Dual Common Source | Enhancement | N | 1 | Pulsed RF | 100 | 13 | 2.4 | 120@6.15V | 1000(Typ) | 15.5 | 1030 | 1215 | 0.14um | Bulk | 5 | SOT-539A | SOT | No | No | EAR99 | No | ||||||||||||
BLF6G38-50,112
Trans RF MOSFET N-CH 65V 16.5A 3-Pin SOT-502A Bulk
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Ampleon | 射频 MOSFETs | Single | Enhancement | N | 1 | 1-Carrier N-CDMA | 65 | 13 | 2.4 | 16.5 | 290@6.15V | 70(Typ) | 14 | 3400 | 3800 | 0.14um | Bulk | 3 | SOT-502A | SOT | No | No | No | No | No | 3A001.b.3.a.4 | No | ||||||||
BLC9H10XS-500AY
Power LDMOS Transistor
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Ampleon | 射频 MOSFETs | Tape and Reel | No | Unknown | Unknown | Unknown | No | ||||||||||||||||||||||||||||
BLF246,112
Trans RF FET N-CH 65V 13A 4-Pin CRFM Bulk
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Ampleon | 射频 MOSFETs | Single Dual Source | Enhancement | N | 1 | CW Class-B|CW Class-C | 65 | ±20 | 13 | 300@10V | 225@28V | 130000 | 80(Typ) | 15|18 | 25 | 108 | Bulk | 4 | CRFM | No | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||
BLP27M810Z
Trans RF MOSFET N-CH 65V 16-Pin HVSON EP T/R
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Ampleon | 射频 MOSFETs | Dual Common Source | Enhancement | N | 2 | Pulsed CW | 65 | 13 | 2.3 | 1000(Typ)@6.05V | 10(Min) | 17 | 10 | 2700 | 0.14um | Tape and Reel | 16 | HVSON EP | SON | No | EAR99 | No | |||||||||||||
BLC10G18XS-400AVTY
Power LDMOS Transistor
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Ampleon | 射频 MOSFETs | Tape and Reel | 7 | DFM | No | Unknown | Unknown | Unknown | No | ||||||||||||||||||||||||||
BLC10G18XS-550AVTY
Trans RF MOSFET N-CH 65V 7-Pin DFM T/R
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Ampleon | 射频 MOSFETs | Dual Common Source | Enhancement | N | 2 | 1-Carrier W-CDMA | 65 | 9 | 2.5 | 108@4.87V | MOSFET | 510(Typ) | 16 | 1805 | 1880 | 0.14um | Tape and Reel | 7 | DFM | No | No | No | No | EAR99 | No | ||||||||||
BLS9G2934L-400U
LDMOS S-Band Radar Power Transistor
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Ampleon | 射频 MOSFETs | ||||||||||||||||||||||||||||||||||
BLC9G20XS-400AVTZ
Trans RF MOSFET N-CH 65V 7-Pin SOT-1258 Tray
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Ampleon | 射频 MOSFETs | Dual Common Source | Enhancement | N | 2 | 1-Carrier W-CDMA | 65 | 13 | 2.5 | 149@6.25V | 570(Typ) | 16.2 | 1805 | 1880 | 0.14um | Tray | 7 | SOT-1258 | SOT | No | Unknown | Unknown | Unknown | EAR99 | No | ||||||||||
BLP15M9S70GZ
Power LDMOS transistor
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Ampleon | 射频 MOSFETs | 3 | TO-270 | TO | |||||||||||||||||||||||||||||||
BLF8G24LS-150VU
Trans RF MOSFET N-CH 65V 7-Pin CDFM Bulk
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Ampleon | 射频 MOSFETs | Single | Enhancement | N | 1 | 2-Carrier W-CDMA | 65 | 13 | 2.3 | 60(Typ)@6.05V | 45(Typ) | 19 | 2300 | 2400 | 0.14um | Bulk | 7 | CDFM | No | No | No | No | No | EAR99 | No | ||||||||||
BLF7G24LS-100,112
Trans RF MOSFET N-CH 65V 28A 3-Pin SOT-502B
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Ampleon | 射频 MOSFETs | Single | Enhancement | N | 1 | 1-Carrier W-CDMA|IS-95 | 65 | 13 | 28 | 100(Typ)@6.05V | 20(Typ) | 18 | 2300 | 2400 | 0.14um | Bulk | 3 | SOT-502B | SOT | No | No | No | No | No | EAR99 | No | |||||||||
BLL8H0514LS-130
Trans RF MOSFET N-CH 100V Bulk
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Ampleon | 射频 MOSFETs | Single | Enhancement | N | 1 | Pulsed RF | 100 | 13 | 2.25 | 275@8.5V | 130(Typ) | 17 | 500 | 1400 | 0.14um | Bulk | No | No | EAR99 | No | No | ||||||||||||||
BLP10H603Z
Trans RF MOSFET N-CH 104V 12-Pin HVSON EP T/R
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Ampleon | 射频 MOSFETs | Single | Enhancement | N | 1 | CW | 104 | 11 | 2.25 | 9000(Typ)@6V | 3.4@0V | 2.5(Typ) | 22.8 | 10 | 1400 | 0.14um | Tape and Reel | 12 | HVSON EP | SON | No | No | EAR99 | No | |||||||||||
BLC9G22LS-160VTY
Trans RF MOSFET N-CH 65V 7-Pin SOT1271-2 T/R
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Ampleon | 射频 MOSFETs | Single | Enhancement | N | 1 | 2-Carrier W-CDMA | 65 | 13 | 2.5 | 98(Typ)@6.25V | MOSFET | 35(Typ) | 18.4 | 2110 | 2200 | 0.14um | Tape and Reel | 7 | SOT1271-2 | SOT | No | No | No | No | EAR99 | No | No | ||||||||
BLF188XRGJ
Trans RF MOSFET N-CH 135V 5-Pin CDFM T/R
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Ampleon | 射频 MOSFETs | Dual Common Source | Enhancement | N | 2 | Pulsed RF | 135 | 11 | 2.25 | 80(Typ)@6V | 582@50V | 1400 | 24.4 | 10 | 600 | 0.14um | Tape and Reel | 5 | CDFM | No | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||
BLC2425M10LS500PY
Trans RF MOSFET N-CH 65V 5-Pin DFM T/R
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Ampleon | 射频 MOSFETs | Dual Common Source | Enhancement | N | 2 | Pulsed CW | 65 | 13 | 2.65 | 45.5(Typ)@6.4V | MOSFET | 500(Typ) | 14.5 | 2400 | 2500 | 0.14um | Tape and Reel | 5 | DFM | No | Unknown | Unknown | Unknown | EAR99 | |||||||||||
BLS9G2729L-350U
LDMOS S-Band Radar Power Transistor
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Ampleon | 射频 MOSFETs | 3 | SOT-502A | SOT | No |