Infineon Technologies AGIPL65R230C7AUMA1MOSFETs
Trans MOSFET N-CH 650V 10A 4-Pin VSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 4 | |
| 10 | |
| 100 | |
| 1 | |
| 230@10V | |
| 20@10V | |
| 20 | |
| 996@400V | |
| 67000 | |
| 22 | |
| 5 | |
| 71 | |
| 8 | |
| -40 | |
| 150 | |
| Tape and Reel | |
| 204@10V | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 8 mm |
| Package Length | 8 mm |
| PCB changed | 4 |
| Standard Package Name | SON |
| Supplier Package | VSON EP |
| 4 | |
| Lead Shape | No Lead |
Amplify electronic signals and switch between them with the help of Infineon Technologies' IPL65R230C7AUMA1 power MOSFET. Its maximum power dissipation is 67000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C. This device is made with coolmos c7 technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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