| 유럽 연합 RoHS 명령어 | Compliant |
| 친환경 무연 | Active |
| 미국 세관 상품 코드 | 8541.21.00.95 |
| Automotive | No |
| PPAP | No |
| 제품 카테고리 | Power MOSFET |
| Material | Si |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 20 |
| Maximum Gate-Source Voltage (V) | ±10 |
| Maximum Gate Threshold Voltage (V) | 1.2 |
| Operating Junction Temperature (°C) | 150 |
| Maximum Continuous Drain Current (A) | 2.4 |
| Maximum Drain-Source Resistance (mOhm) | 65@4V |
| Typical Gate Charge @ Vgs (nC) | 2.2@4V |
| Typical Input Capacitance @ Vds (pF) | 200@10V |
| Maximum Power Dissipation (mW) | 800 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Mounting | Surface Mount |
| Package Height | 0.7 mm |
| Package Width | 1.7 mm |
| Package Length | 2 mm |
| PCB changed | 5 |
| Supplier Package | UFV |
| Pin Count | 5 |
