Toshiba Diodes, Transistors and Thyristors
| 부품 번호 | Price | 주식 | Manufacturer | Category | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TRS8E65H,S1Q
Diode Schottky SiC 650V 23A 2-Pin(2+Tab) TO-220 Stick
|
주식
87
$1.461
단위 당
|
Toshiba | Rectifiers | Schottky Diode | SiC | Single | 650 | 23 | 410 | 1.35@8A | 90 | 75000 | Stick | 2 | TO-220 | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MSZ20V,LF
Zener Diode Single 20V 6% 70Ohm 600mW 3-Pin S-Mini T/R
|
주식
2,840
$0.0287
단위 당
|
Toshiba | Zener | Voltage Regulator | Single | 20 | 6% | 5 | 0.1 | 70 | 600 | 29(Typ) | 600 | Tape and Reel | 3 | S-Mini | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
XPN3R804NC,L1XHQ
Trans MOSFET N-CH Si 40V 40A 8-Pin TSOP Advance(WF) EP T/R Automotive AEC-Q101
|
주식
5,033
$0.3591 에서 $0.5748로 변경
단위 당
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±20 | 2.5 | 40 | 3.8@10V | 35@10V | 35 | 2270 | 2230@10V | Tape and Reel | 8 | TSOP Advance(WF) EP | SO | Yes | AEC-Q101 | Yes | Unknown | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TW045Z120C,S1F
Trans MOSFET N-CH SiC 1.2KV 40A 4-Pin(4+Tab) TO-247 Tube
|
주식
30
$11.464
단위 당
|
Toshiba | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 1200 | 25 | 40 | 62@18V | 57@18V | 182000 | 1969@800V | Tube | 4 | TO-247 | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUS10I30A(TE85L,QM
Diode Schottky 30V 1A 2-Pin US-FLAT T/R
|
주식
1,980
$0.0701
단위 당
|
Toshiba | Rectifiers | Schottky Diode | Single | 30 | 1 | 20 | 0.39@0.7A | 60 | Tape and Reel | 2 | US-FLAT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CSLZ24V,L3F | 24V ZNR DIODE SOD-962 OVP
Diode Zener Single 24V 6% 400mW 2-Pin SL T/R
|
주식
10,000
$0.0084 에서 $0.0516로 변경
단위 당
|
Toshiba | Zener | Voltage Regulator | Single | 24 | 6% | 5 | 0.5 | 70 | 400 | 400 | Tape and Reel | 2 | SL | SOD | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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인기 검색어
1SV229TPH3F
Varactor Diode Single 15V 14pF 2-Pin USC T/R
|
주식
2,329
$0.123 에서 $0.201로 변경
단위 당
|
Toshiba | Varactors | VCO | UHF | Single | 15 | 0.003 | 2 | 2V/10V | 14@2V | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TW107Z65C,S1F
Trans MOSFET N-CH SiC 650V 20A 4-Pin(4+Tab) TO-247 Tube
|
주식
30
$4.464
단위 당
|
Toshiba | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 650 | 25 | 20 | 152@18V | 21@18V | 76000 | 600@400V | Tube | 4 | TO-247 | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CUHS20S60,H3F
Diode Small Signal Schottky Si 2A 2-Pin US-H
|
주식
3
$0.069
단위 당
|
Toshiba | Rectifiers | Small Signal Schottky Diode | Si | Single | 2 | 10 | 0.53 | 650 | 290(Typ) | 2 | US-H | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K72CTC,L3F
Trans MOSFET N-CH Si 60V 0.15A 3-Pin CST-C T/R
|
주식
15,516
$0.0288 에서 $0.0779로 변경
단위 당
|
Toshiba | MOSFETs | Small Signal | Si | N | Single | Enhancement | 1 | 60 | ±20 | 0.15 | 3900@10V | 0.27@4.5V | 500 | 11@10V | Tape and Reel | 3 | CST-C | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CSLZ6V2,L3F | 6.2V ZNR DIODE SOD-962 OVP
Diode Zener Single 6.2V 6% 400mW 2-Pin SL T/R
|
주식
1,519
$0.0205 에서 $0.0516로 변경
단위 당
|
Toshiba | Zener | Voltage Regulator | Single | 6.2 | 6% | 5 | 2.5 | 30 | 400 | 400 | Tape and Reel | 2 | SL | SOD | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CSLZ30V,L3F | 30V ZNR DIODE SOD-962 OVP
Diode Zener Single 30V 6% 400mW 2-Pin SL T/R
|
주식
10,000
$0.0084 에서 $0.0559로 변경
단위 당
|
Toshiba | Zener | Voltage Regulator | Single | 30 | 6% | 2 | 0.5 | 150 | 400 | 400 | Tape and Reel | 2 | SL | SOD | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TW048Z65C,S1F
Trans MOSFET N-CH SiC 650V 40A 4-Pin(4+Tab) TO-247 Tube
|
주식
30
$8.037
단위 당
|
Toshiba | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 650 | 25 | 40 | 69@18V | 41@18V | 132000 | 1362@400V | Tube | 4 | TO-247 | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SSM3J35CTC,L3F
Trans MOSFET P-CH Si 20V 0.25A 3-Pin CST-C T/R
|
주식
272
$0.0287
단위 당
|
Toshiba | MOSFETs | Small Signal | Si | P | Single | Enhancement | 1 | 20 | ±10 | 1 | 0.25 | 1400@4.5V | 500 | 6 | 21@10V | 1100@4.5V|1500@2.5V|2000@1.8V|2300@1.5V|3200@1.2V | Tape and Reel | 3 | CST-C | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TW083Z65C,S1F
Trans MOSFET N-CH SiC 650V 30A 4-Pin(4+Tab) TO-247 Tube
|
주식
30
$6.469
단위 당
|
Toshiba | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 650 | 25 | 30 | 118@18V | 28@18V | 111000 | 873@400V | Tube | 4 | TO-247 | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TRS4E65H,S1Q
Diode Schottky SiC 650V 14A 2-Pin(2+Tab) TO-220 Stick
|
주식
50
$0.3556 에서 $0.3643로 변경
단위 당
|
Toshiba | Rectifiers | Schottky Diode | SiC | Single | 650 | 14 | 230 | 1.35@4A | 55 | 60000 | Stick | 2 | TO-220 | TO | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CTS05S30,L3F
Diode Small Signal Schottky Si 30V 0.5A 2-Pin CST T/R
|
주식
23,352
$0.029 에서 $0.03로 변경
단위 당
|
Toshiba | Rectifiers | Small Signal Schottky Diode | Si | Single | 30 | 0.5 | 2 | 0.47 | 300 | 55(Typ) | Tape and Reel | 2 | CST | SOD | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
1SV239TPH3F
Varactor Diode Single 15V 3.8pF 2-Pin USC T/R
|
주식
5,194
$0.0626 에서 $0.0631로 변경
단위 당
|
Toshiba | Varactors | VCO | UHF | Single | 15 | 0.003 | 2 | 2V/10V | 3.8@2V | Tape and Reel | 2 | USC | SOD | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
TRS3E65H,S1Q
Diode Schottky SiC 650V 12A 2-Pin(2+Tab) TO-220 Stick
|
주식
196
$0.8554
단위 당
|
Toshiba | Rectifiers | Schottky Diode | SiC | Single | 650 | 12 | 170 | 1.35@3A | 45 | 55000 | Stick | 2 | TO-220 | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH1R005PL,L1Q
Trans MOSFET N-CH Si 45V 280A 8-Pin SOP Advance T/R
|
주식
31,492
$0.8685 에서 $0.9866로 변경
단위 당
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 45 | ±20 | 2.4 | 280 | 1.04@10V | 59@4.5V|122@10V | 122 | 3000 | 7350@22.5V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
BAS316,H3F
Diode Switching Si 100V 0.25A 2-Pin USC T/R
|
주식
2,998
$0.0232 에서 $0.1109로 변경
단위 당
|
Toshiba | Rectifiers | Switching Diode | Si | Single | 100 | 0.25 | 1 | 1.25@0.15A | 0.2@80V | 0.35(Typ) | 3 | 230 | Tape and Reel | 2 | USC | SOD | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM3K361TU,LF
Trans MOSFET N-CH Si 100V 3.5A 3-Pin UFM T/R Automotive AEC-Q101
|
주식
3,000
$0.1433
단위 당
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 3.5 | 69@10V | 3.2@4.5V | 1800 | 430@15V | Tape and Reel | 3 | UFM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK25A60X,S5X
Trans MOSFET N-CH Si 600V 25A 3-Pin(3+Tab) TO-220SIS Tube
|
주식
187
$1.655
단위 당
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.5 | 25 | 125@10V | 40@10V | 40 | 45000 | 2400@300V | Tube | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPN11003NL,LQ(S
Trans MOSFET N-CH Si 30V 31A 8-Pin TSON Advance T/R
|
주식
1,211
$0.1132 에서 $0.126로 변경
단위 당
|
Toshiba | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2.3 | 31 | 11@10V | 3.3@4.5V|7.5@10V | 7.5 | 19000 | 510@15V | 8 | TSON Advance | SON | Unknown | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1104MFV,L3F
Trans Digital BJT NPN 50V 0.1A 150mW 3-Pin VESM T/R Automotive AEC-Q101
|
주식
711
$0.0138
단위 당
|
Toshiba | Digital BJT - Pre-Biased | NPN | Single | 50 | 47 | 1 | 0.1 | 80@10mA@5V | 150 | 0.3@0.5mA@5mA | Tape and Reel | 3 | VESM | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No |