| 유럽 연합 RoHS 명령어 | Compliant |
| 미국수출통제분류ECCN 인코딩 | EAR99 |
| 친환경 무연 | Active |
| 미국 세관 상품 코드 | EA |
| 제품 카테고리 | Power MOSFET |
| Material | Si |
| Configuration | Dual Common Drain Hex Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Gate-Source Voltage (V) | ±8 |
| Operating Junction Temperature (°C) | 150 |
| Typical Gate Charge @ Vgs (nC) | 76@4V |
| Maximum Power Dissipation (mW) | 2440 |
| Typical Fall Time (ns) | 2100 |
| Typical Rise Time (ns) | 1300 |
| Typical Turn-Off Delay Time (ns) | 3800 |
| Typical Turn-On Delay Time (ns) | 1 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Mounting | Surface Mount |
| Package Height | 0.09 mm |
| Package Width | 2.74 mm |
| Package Length | 3 mm |
| PCB changed | 14 |
| Supplier Package | TCSPED |
| Pin Count | 14 |
