| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| 0.6 | |
| 100 | |
| 10 | |
| 1000@10V | |
| 100(Max)@25V | |
| 700 | |
| 15(Max) | |
| 12(Max) | |
| 12(Max) | |
| 8(Max) | |
| -55 | |
| 150 | |
| Box | |
| Mounting | Through Hole |
| Package Height | 3.9 mm |
| Package Width | 2.28 mm |
| Package Length | 4.57 mm |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | E-Line |
| 3 | |
| Lead Shape | Through Hole |
Amplify electronic signals and switch between them with the help of Diodes Zetex's ZVN4206ASTZ power MOSFET. Its maximum power dissipation is 700 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes dmos technology.
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.

