| RoHS (Unione Europea) | Compliant |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Active |
| Codice HTS | 8541.29.00.55 |
| Automotive | No |
| PPAP | No |
| Categoria prodotti | Power MOSFET |
| Material | SiC |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 650 |
| Maximum Gate-Source Voltage (V) | 25 |
| Maximum Continuous Drain Current (A) | 40 |
| Maximum Drain-Source Resistance (mOhm) | 65@18V |
| Typical Gate Charge @ Vgs (nC) | 41@18V |
| Typical Input Capacitance @ Vds (pF) | 1362@400V |
| Maximum Power Dissipation (mW) | 132000 |
| Typical Fall Time (ns) | 32 |
| Typical Rise Time (ns) | 43 |
| Mounting | Through Hole |
| Package Height | 20.95 mm |
| Package Width | 5.02 mm |
| Package Length | 15.94 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| Pin Count | 3 |
