| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Si | |
| Dual Dual Drain | |
| Enhancement | |
| P | |
| 2 | |
| 15 | |
| 2 | |
| 1.17 | |
| 400@4.5V | |
| 5.45@10V | |
| 5.45 | |
| 840 | |
| 2 | |
| 10 | |
| 13 | |
| 4.5 | |
| -40 | |
| 125 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) |
| Package Width | 3.9 |
| Package Length | 4.91 |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| 8 | |
| Lead Shape | Gull-wing |
Thanks to Texas Instruments, both your amplification and switching needs can be taken care of with one component: the TPS1120DR power MOSFET. Its maximum power dissipation is 840 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 125 °C.
| EDA / CAD Models |
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