| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 15 | |
| 2 | |
| 1.5 | |
| 1.6 | |
| 400@4.5V | |
| 5.45@10V | |
| 5.45 | |
| 1.4 | |
| 0.87 | |
| 791 | |
| 2 | |
| 10 | |
| 13 | |
| 4.5 | |
| -40 | |
| 125 | |
| Tube | |
| 180@10V|291@4.5V|476@3V|606@2.7V | |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) mm |
| Package Width | 3.98(Max) mm |
| Package Length | 5(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| 8 | |
| Lead Shape | Gull-wing |
This TPS1100D power MOSFET from Texas Instruments can be used for amplification in your circuit. Its maximum power dissipation is 791 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 125 °C.
| EDA / CAD Models |
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.