| RoHS (Unione Europea) | Compliant |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Active |
| Codice HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Categoria prodotti | Power MOSFET |
| Material | Si |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 600 |
| Maximum Gate-Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 3.7 |
| Maximum Continuous Drain Current (A) | 6.2 |
| Maximum Gate-Source Leakage Current (nA) | 1000 |
| Maximum IDSS (uA) | 10 |
| Maximum Drain-Source Resistance (mOhm) | 820@10V |
| Typical Gate Charge @ Vgs (nC) | 12@10V |
| Typical Gate Charge @ 10V (nC) | 12 |
| Typical Input Capacitance @ Vds (pF) | 390@300V |
| Maximum Power Dissipation (mW) | 60000 |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 18 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tube |
| Mounting | Through Hole |
| Package Height | 6.1 mm |
| Package Width | 2.3 mm |
| Package Length | 6.65(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | IPAK |
| Pin Count | 3 |
