ToshibaTK3A65D(STA4,Q,M)MOSFETs
Trans MOSFET N-CH Si 650V 3A 3-Pin(3+Tab) TO-220SIS
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| ±30 | |
| 3 | |
| 2250@10V | |
| 11@10V | |
| 11 | |
| 540@25V | |
| 35000 | |
| 8 | |
| 18 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 15 |
| Package Width | 4.5 |
| Package Length | 10 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220SIS |
| 3 |
Make an effective common gate amplifier using this TK3A65D(STA4,Q,M) power MOSFET from Toshiba. Its maximum power dissipation is 35000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.