| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 100 | |
| 100 | |
| 5 | |
| 1@0.3A@3A|4@2.5A@10A | |
| 10 | |
| 20@3A@4V|40@1A@4V | |
| 80000 | |
| -65 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 21.08(Max) mm |
| Package Width | 5.3(Max) mm |
| Package Length | 16.26(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 | |
| Lead Shape | Through Hole |
Use this versatile NPN TIP33CG GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 80000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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