STMicroelectronicsSTD3NK60Z-1MOSFETs
Trans MOSFET N-CH 600V 2.4A 3-Pin(3+Tab) IPAK Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 2.4 | |
| 3600@10V | |
| 11.8@10V | |
| 11.8 | |
| 311@25V | |
| 45000 | |
| 14 | |
| 14 | |
| 19 | |
| 9 | |
| -55 | |
| 150 | |
| Industrial | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 6.2(Max) mm |
| Package Width | 2.4(Max) mm |
| Package Length | 6.6(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | IPAK |
| 3 | |
| Lead Shape | Through Hole |
Amplify electronic signals and switch between them with the help of STMicroelectronics' STD3NK60Z-1 power MOSFET. Its maximum power dissipation is 45000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes supermesh technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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