STMicroelectronicsSTB80NF55-06T4MOSFETs
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 55 | |
| ±20 | |
| 80 | |
| 6.5@10V | |
| 142@10V | |
| 142 | |
| 4400@25V | |
| 300000 | |
| 65 | |
| 155 | |
| 125 | |
| 27 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 4.6(Max) mm |
| Package Width | 9.35(Max) mm |
| Package Length | 10.4(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
Increase the current or voltage in your circuit with this STB80NF55-06T4 power MOSFET from STMicroelectronics. Its maximum power dissipation is 300000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with stripfet ii technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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