VishaySQJ940EP-T1_GE3MOSFETs
Trans MOSFET N-CH 40V 15A/18A 5-Pin(4+Tab) PowerPAK SO EP T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 40 | |
| ±20 | |
| 2.5 | |
| 15@Channel 1|18@Channel 2 | |
| 100 | |
| 1 | |
| 16@10V@Channel 1|6.4@10V@Channel 2 | |
| 13.5@10V@Channel 1|31.8@10V@Channel 2 | |
| 13.5@Channel 1|31.8@Channel 2 | |
| 717@20V@Channel 1|1850@20V@Channel 2 | |
| 48000@Channel 1|43000@Channel 2 | |
| 4.9@Channel 1|13.5@Channel 2 | |
| 9.5@Channel 1|9.5@Channel 2 | |
| 15.6@Channel 1|47@Channel 2 | |
| 4.8@Channel 1|7.7@Channel 2 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.07 |
| Package Width | 4.37 |
| Package Length | 4.9 |
| PCB changed | 4 |
| Tab | Tab |
| Standard Package Name | SO |
| Supplier Package | PowerPAK SO EP |
| 5 |
Compared to traditional transistors, SQJ940EP-T1-GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 48000@Channel 1|43000@Channel 2 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
Sistemi di droni più intelligenti: dal progetto al decollo
Scarica la guida e dotati di tutti gli strumenti e strategie intelligenti per progettare i sistemi di droni del futuro: agili, efficienti e modulari.

