Infineon Technologies AGSPD04P10PGBTMA1MOSFETs
Trans MOSFET P-CH 100V 4A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±20 | |
| 4 | |
| 4 | |
| 1000@10V | |
| 9@10V | |
| 9 | |
| 5 | |
| 1.4 | |
| 218 | |
| 240@25V | |
| 62 | |
| 38000 | |
| 4.5 | |
| 8.6 | |
| 14 | |
| 5.7 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 2.41(Max) mm |
| Package Width | 6.22(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
Make an effective common gate amplifier using this SPD04P10PGBTMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 38000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with sipmos technology.
| EDA / CAD Models |
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