onsemiSMMUN2216LT1GBJT digitale
Trans Digital BJT NPN 50V 0.1A 400mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| EA | |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Single | |
| 50 | |
| 0.1 | |
| 160@5mA@10V | |
| 4.7 | |
| 0.25@1mA@10mA | |
| 400 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.94 mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
The NPN SMMUN2216LT1G digital transistor from ON Semiconductor is your alternative to traditional BJTs in that it can provide digital signal processing power. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 160@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. Its maximum power dissipation is 400 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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