onsemiSMMBTA06LT1GGP BJT
Trans GP BJT NPN 80V 0.5A 300mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 80 | |
| 4 | |
| -55 to 150 | |
| 0.25@10mA@100mA | |
| 0.5 | |
| 100 | |
| 100@10mA@1V|100@100mA@1V | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 0.94 mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Use this versatile NPN SMMBTA06LT1G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V.
| EDA / CAD Models |
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.