VishaySIS892ADN-T1-GE3MOSFETs
Trans MOSFET N-CH 100V 28A 8-Pin PowerPAK 1212 EP T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3 | |
| 28 | |
| 100 | |
| 1 | |
| 33@10V | |
| 12.8@10V|9.7@7.5V|6.1@4.5V | |
| 12.8 | |
| 550@50V | |
| 3700 | |
| 9 | |
| 13 | |
| 16 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) |
| Package Width | 3.05 |
| Package Length | 3.05 |
| PCB changed | 8 |
| Supplier Package | PowerPAK 1212 EP |
| 8 | |
| Lead Shape | No Lead |
Use Vishay's SIS892ADN-T1-GE3 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 3700 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology.
| EDA / CAD Models |
Sistemi di droni più intelligenti: dal progetto al decollo
Scarica la guida e dotati di tutti gli strumenti e strategie intelligenti per progettare i sistemi di droni del futuro: agili, efficienti e modulari.