| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 2.2 | |
| 40 | |
| 100 | |
| 1 | |
| 5.5@10V | |
| 9.8@4.5V|21.3@10V | |
| 21.3 | |
| 1330@20V | |
| 3700 | |
| 9 | |
| 65 | |
| 24 | |
| 22 | |
| -55 | |
| 150 | |
| 20 | |
| 19.3 | |
| 3.7 | |
| 81 | |
| 0.75 | |
| 2.5 | |
| 31 | |
| 1.2 | |
| 0.2 | |
| 1.5 | |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) |
| Package Width | 3.05 |
| Package Length | 3.05 |
| PCB changed | 8 |
| Supplier Package | PowerPAK 1212 EP |
| 8 | |
| Lead Shape | No Lead |
Create an effective common drain amplifier using this SIS488DN-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 3700 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology.
| EDA / CAD Models |
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