| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 4 | |
| -55 to 150 | |
| 47 | |
| 100 | |
| 1 | |
| 64@10V | |
| 148@10V | |
| 148 | |
| 4810@100V | |
| 357000 | |
| 82 | |
| 72 | |
| 93 | |
| 28 | |
| -55 | |
| 150 | |
| 20 | |
| 1.2 | |
| Mounting | Through Hole |
| Package Height | 20.82(Max) |
| Package Width | 5.31(Max) |
| Package Length | 15.87(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247AC |
| 3 | |
| Lead Shape | Through Hole |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's SIHG47N60E-GE3 power MOSFET can provide a solution. Its maximum power dissipation is 357000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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