| RoHS (Unione Europea) | Compliant |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Active |
| Codice HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Categoria prodotti | Power MOSFET |
| Material | Si |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 400 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 1.8 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 100 |
| Maximum Drain-Source Resistance (mOhm) | 7000@10V |
| Typical Gate Charge @ Vgs (nC) | 13(Max)@10V |
| Typical Gate Charge @ 10V (nC) | 13(Max) |
| Typical Gate to Drain Charge (nC) | 5(Max) |
| Typical Gate to Source Charge (nC) | 3.2(Max) |
| Typical Reverse Recovery Charge (nC) | 640 |
| Typical Input Capacitance @ Vds (pF) | 270@25V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 8@25V |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Output Capacitance (pF) | 50 |
| Maximum Power Dissipation (mW) | 50000 |
| Typical Fall Time (ns) | 24 |
| Typical Rise Time (ns) | 10 |
| Typical Turn-Off Delay Time (ns) | 25 |
| Typical Turn-On Delay Time (ns) | 11 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 7.2 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
| Typical Gate Plateau Voltage (V) | 5.1 |
| Typical Reverse Recovery Time (ns) | 170 |
| Maximum Diode Forward Voltage (V) | 4 |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) |
| Package Width | 6.22(Max) |
| Package Length | 6.73(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| Pin Count | 3 |
