| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 12 | |
| ±8 | |
| 0.9 | |
| 9 | |
| 4000 | |
| 1 | |
| 25.5@4.5V | |
| 13.4@4.5V|22.1@8V | |
| 1180@6V | |
| 2400 | |
| 50|52 | |
| 42|10 | |
| 60 | |
| 22|7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.75(Max) |
| Package Width | 1.6 |
| Package Length | 1.6 |
| PCB changed | 6 |
| Supplier Package | PowerPAK SC-75 |
| 6 | |
| Lead Shape | No Lead |
If you need to either amplify or switch between signals in your design, then Vishay's SIB441EDK-T1-GE3 power MOSFET is for you. Its maximum power dissipation is 2400 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology.
| EDA / CAD Models |
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