| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 1.1 | |
| 40 | |
| 100 | |
| 1 | |
| 3.6@10V | |
| 72@4.5V|150@10V | |
| 150 | |
| 6600@10V | |
| 4800 | |
| 35|25 | |
| 45|10 | |
| 100|110 | |
| 45|13 | |
| -50 | |
| 150 | |
| Tape and Reel | |
| Lead Shape | No Lead |
This SI7655DN-T1-GE3 power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 4800 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -50 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
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