| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 2.5 | |
| 35 | |
| 100 | |
| 1 | |
| 7@10V | |
| 39.5@4.5V|84.5@10V | |
| 84.5 | |
| 4427@15V | |
| 3700 | |
| 10|17 | |
| 13|42 | |
| 55|52 | |
| 15|55 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) |
| Package Width | 3.05 |
| Package Length | 3.05 |
| PCB changed | 8 |
| Supplier Package | PowerPAK 1212 EP |
| 8 | |
| Lead Shape | No Lead |
Use Vishay's SI7625DN-T1-GE3 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 3700 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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