| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 60 | |
| 14@10V | |
| 47.5@10V | |
| 47.5 | |
| 2870@50V | |
| 6250 | |
| 11 | |
| 10 | |
| 27 | |
| 21 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) mm |
| Package Width | 5.89 mm |
| Package Length | 4.9 mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | PowerPAK SO EP |
| 8 | |
| Lead Shape | No Lead |
If you need to either amplify or switch between signals in your design, then Vishay's SI7178DP-T1-GE3 power MOSFET is for you. Its maximum power dissipation is 6250 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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