50-75% di sconto
VishaySI4160DY-T1-GE3MOSFETs
Trans MOSFET N-CH 30V 25.4A 8-Pin SOIC N T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.4 | |
| 25.4 | |
| 4.9@10V | |
| 16.8@4.5V|36@10V | |
| 36 | |
| 5.2 | |
| 5.1 | |
| 10 | |
| 2071@15V | |
| 406 | |
| 2500 | |
| 12 | |
| 16 | |
| 28 | |
| 25 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 4@10V|5.1@4.5V | |
| Mounting | Surface Mount |
| Package Height | 1.55(Max) mm |
| Package Width | 4(Max) mm |
| Package Length | 5(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
This SI4160DY-T1-GE3 power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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