| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 8 | |
| ±5 | |
| 5.3 | |
| 23@4.5V | |
| 28@4.5V | |
| 1100 | |
| 110 | |
| 65 | |
| 210 | |
| 27 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1(Max) mm |
| Package Width | 1.65 mm |
| Package Length | 3.05 mm |
| PCB changed | 6 |
| Standard Package Name | SO |
| Supplier Package | TSOP |
| 6 | |
| Lead Shape | Gull-wing |
Use Vishay's SI3499DV-T1-GE3 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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