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VishaySI2312CDS-T1-GE3MOSFETs
Trans MOSFET N-CH 20V 6A 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±8 | |
| 6 | |
| 31.8@4.5V | |
| 8.8@4.5V|12@5V | |
| 865@10V | |
| 1250 | |
| 8 | |
| 17 | |
| 31 | |
| 8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.02(Max) mm |
| Package Width | 1.4(Max) mm |
| Package Length | 3.04(Max) mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's SI2312CDS-T1-GE3 power MOSFET can provide a solution. Its maximum power dissipation is 1250 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
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