| RoHS (Unione Europea) | Compliant with Exemption |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | NRND |
| Codice HTS | 8541.29.00.95 |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Categoria prodotti | Power MOSFET |
| Material | SiC |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 650 |
| Maximum Gate-Source Voltage (V) | 22 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Operating Junction Temperature (°C) | -55 to 200 |
| Maximum Continuous Drain Current (A) | 100 |
| Maximum Gate-Source Leakage Current (nA) | 20(Typ) |
| Maximum IDSS (uA) | 10 |
| Maximum Drain-Source Resistance (mOhm) | 26@18V |
| Typical Gate Charge @ Vgs (nC) | 162@18V |
| Typical Gate to Drain Charge (nC) | 49 |
| Typical Gate to Source Charge (nC) | 45 |
| Typical Reverse Recovery Charge (nC) | 370 |
| Typical Input Capacitance @ Vds (pF) | 3315@520V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 46@520V |
| Minimum Gate Threshold Voltage (V) | 1.9 |
| Typical Output Capacitance (pF) | 267 |
| Maximum Power Dissipation (mW) | 420000 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 200 |
| Supplier Temperature Grade | Automotive |
| Packaging | Tube |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 20@18V |
| Maximum Positive Gate-Source Voltage (V) | 22 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 280 |
| Typical Diode Forward Voltage (V) | 2.8 |
| Typical Gate Plateau Voltage (V) | 2 |
| Typical Reverse Recovery Time (ns) | 26 |
| Typical Gate Threshold Voltage (V) | 3.1 |
| Mounting | Through Hole |
| Package Height | 20 mm |
| Package Width | 5 mm |
| Package Length | 15.6 mm |
| PCB changed | 3 |
| Tab | Tab |
| Supplier Package | HIP-247 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
