| RoHS (Unione Europea) | Compliant with Exemption |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | LTB |
| Codice HTS | COMPONENTS |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Categoria prodotti | Power MOSFET |
| Material | SiC |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 25 |
| Maximum Gate Threshold Voltage (V) | 3(Typ) |
| Operating Junction Temperature (°C) | -55 to 200 |
| Maximum Continuous Drain Current (A) | 65 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 100 |
| Maximum Drain-Source Resistance (mOhm) | 69@20V |
| Typical Gate Charge @ Vgs (nC) | 122@20V |
| Typical Gate to Drain Charge (nC) | 35 |
| Typical Gate to Source Charge (nC) | 19 |
| Typical Reverse Recovery Charge (nC) | 230 |
| Typical Input Capacitance @ Vds (pF) | 1900@400V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 30@400V |
| Minimum Gate Threshold Voltage (V) | 1.8 |
| Typical Output Capacitance (pF) | 170 |
| Maximum Power Dissipation (mW) | 318000 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 200 |
| Supplier Temperature Grade | Industrial |
| Packaging | Tube |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 52@20V |
| Maximum Positive Gate-Source Voltage (V) | 25 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 130 |
| Typical Diode Forward Voltage (V) | 3.5 |
| Typical Gate Plateau Voltage (V) | 8 |
| Typical Reverse Recovery Time (ns) | 55 |
| Typical Gate Threshold Voltage (V) | 3 |
| Mounting | Through Hole |
| Package Height | 20 mm |
| Package Width | 5 mm |
| Package Length | 15.6 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | HIP-247 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
