| RoHS (Unione Europea) | Compliant |
| Stato del componente | Active |
| Automotive | No |
| PPAP | No |
| Categoria prodotti | Power MOSFET |
| Material | Si |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 100 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Operating Junction Temperature (°C) | 175 |
| Maximum Continuous Drain Current (A) | 300 |
| Maximum Drain-Source Resistance (mOhm) | 1.86@10V |
| Typical Gate Charge @ Vgs (nC) | 170@10V |
| Typical Gate Charge @ 10V (nC) | 170 |
| Typical Input Capacitance @ Vds (pF) | 11300@50V |
| Maximum Power Dissipation (mW) | 340000 |
| Typical Fall Time (ns) | 200 |
| Typical Rise Time (ns) | 90 |
| Typical Turn-Off Delay Time (ns) | 195 |
| Typical Turn-On Delay Time (ns) | 72 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Mounting | Surface Mount |
| Package Height | 1.05(Max) |
| Package Width | 8.1(Max) |
| Package Length | 8.1(Max) |
| PCB changed | 8 |
| Supplier Package | DFN-S EP |
| Pin Count | 8 |
